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IXGT20N120 PDF预览

IXGT20N120

更新时间: 2024-02-07 10:39:22
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
2页 109K
描述
IGBT

IXGT20N120 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-268AA
包装说明:TO-268, 3 PIN针数:4
Reach Compliance Code:not_compliant风险等级:5.82
外壳连接:COLLECTOR最大集电极电流 (IC):40 A
集电极-发射极最大电压:1200 V配置:SINGLE
JEDEC-95代码:TO-268AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):630 ns标称接通时间 (ton):43 ns

IXGT20N120 数据手册

 浏览型号IXGT20N120的Datasheet PDF文件第2页 
VCES  
IC25  
= 1200 V  
= 40 A  
IXGH 20N120  
IXGT 20N120  
IGBT  
VCE(sat) = 2.5 V  
tfi(typ)  
= 380 ns  
Preliminary Data Sheet  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247(IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
S
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
40  
20  
80  
A
A
A
TO-268(IXGT)  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 47 Ω  
ICM = 40  
A
(RBSOA)  
Clamped inductive load  
@ 0.8 VCES  
G
E
C (TAB)  
PC  
TC = 25°C  
150  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
International standard packages  
JEDEC TO-247 and TO-268  
High current handling capability  
MOS Gate turn-on  
Maximum tab temperature for soldering  
260  
°C  
Md  
Mounting torque (TO-247)  
1.13/10 Nm/lb.in.  
- drive simplicity  
Weight  
TO-247  
TO-268  
6
5
g
g
Applications  
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Switch-mode and resonant-mode  
power supplies  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 1 mA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
1200  
2.5  
V
V
5.0  
Capacitor discharge  
ICES  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
250  
1
µA  
mA  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
Easy to mount with one screw  
Reduces assembly time and cost  
High power density  
VCE(sat)  
IC = IC90, VGE = 15 V  
2.0  
2.5  
© 2002 IXYS All rights reserved  
DS98966 (11/02)  

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