Datasheet > IXGT24N170AH1

IXGT24N170AH1

更新时间： 2024-11-19 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		栅瞄准线功率控制晶体管
页数	文件大小	规格书
5页	302K
描述
功能与特色: 应用:?

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXGT24N170AH1 数据手册

Preliminary Technical Information

High Voltage

IGBTs w/Diode

V_CES= 1700V

I_C25= 24A

V_CE(sat)≤ 6.0V

t_fi(typ)= 40ns

IXGH24N170AH1

IXGT24N170AH1

TO-247 (IXGH)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

1700

C (TAB)

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

± 20

± 30

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1ms

TO-268 (IXGT)

SSOA

(RBSOA)

_GE= 15V, T_VJ= 125°C, R_G= 10Ω

I_CM= 50

0.8 • V_CES

Clamped Inductive Load

C (TAB)

t_SC

P_C

T_J= 125°C, V_CE= 1200V, V_GE= 15V, R_G= 22Ω

T_C= 25°C

μs

250

G = Gate

E = Emitter

= Collector

T_J

-55 ... +150

150

°C

TAB = Collector

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

Features

^zOptimized for Low Conduction and

Switching Losses

^zAnti-Parallel Ultra Fast Diode

^zInternational Standard Packages

M_d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

Weight

TO-247

TO-268

Advantages

^zHigh Power Density

^zLow Gate Drive Requirement

Symbol Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

1700

3.0

^zPower Inverters

^zUPS

5.0

I_CES

V_CE= 0.8 • V_CES, V_GE= 0V

100 μA

1.5 mA

^zMotor Drives

^zSMPS

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

^zPFC Circuits

^zWelding Machines

V_CE(sat)

I_C= 16A, V_GE= 15V, Note 1

4.5

4.8

6.0

T_J= 125°C

DS99413A(05/09)

12 3 4 5

中文翻译

下载PDF

与IXGT24N170AH1相关器件

型号	品牌	获取价格	描述	数据表
IXGT24N60B	IXYS	获取价格	Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-268AA, D3PAK-3
IXGT24N60C	IXYS	获取价格	HiPerFAST IGBT Lightspeed Series
IXGT24N60CD1	IXYS	获取价格	HiPerFAST IGBT with Diode Lightspeed Series
IXGT25N160	IXYS	获取价格	High Voltage IGBT
IXGT25N160	LITTELFUSE	获取价格	功能与特色: 应用:?
IXGT25N250	IXYS	获取价格	High Voltage IGBT For Capacitor Discharge Applications
IXGT25N250	LITTELFUSE	获取价格	NPT IGBT拥有方形RBSOA和10 us的短路耐受能力。具有正温度系数Vce(sa
IXGT25N250HV	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 2500V V(BR)CES, N-Channel,
IXGT28N120B	IXYS	获取价格	High Voltage IGBT
IXGT28N120B	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30