型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGT24N60B | IXYS |
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Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-268AA, D3PAK-3 | |
IXGT24N60C | IXYS |
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HiPerFAST IGBT Lightspeed Series | |
IXGT24N60CD1 | IXYS |
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HiPerFAST IGBT with Diode Lightspeed Series | |
IXGT25N160 | IXYS |
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High Voltage IGBT | |
IXGT25N160 | LITTELFUSE |
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功能与特色: 应用:? | |
IXGT25N250 | IXYS |
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High Voltage IGBT For Capacitor Discharge Applications | |
IXGT25N250 | LITTELFUSE |
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NPT IGBT拥有方形RBSOA和10 us的短路耐受能力。 具有正温度系数Vce(sa | |
IXGT25N250HV | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 60A I(C), 2500V V(BR)CES, N-Channel, | |
IXGT28N120B | IXYS |
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High Voltage IGBT | |
IXGT28N120B | LITTELFUSE |
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GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 |