5秒后页面跳转
IXGT24N170 PDF预览

IXGT24N170

更新时间: 2024-11-06 14:56:35
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
3页 144K
描述
功能与特色: 应用:?

IXGT24N170 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
风险等级:5.67外壳连接:COLLECTOR
最大集电极电流 (IC):50 A集电极-发射极最大电压:1700 V
配置:SINGLE最大降落时间(tf):500 ns
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-268AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):250 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):560 ns标称接通时间 (ton):105 ns
Base Number Matches:1

IXGT24N170 数据手册

 浏览型号IXGT24N170的Datasheet PDF文件第2页浏览型号IXGT24N170的Datasheet PDF文件第3页 
Advance Technical Information  
VCES = 1700V  
IC25 = 50A  
VCE(sat) 3.3V  
tfi(typ) = 250ns  
High Voltage  
IGBT  
IXGH24N170  
IXGT24N170  
TO-247 (IXGH)  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TC = 25°C to 150°C  
1700  
1700  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
G
C
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
E
TO-268 (IXGT)  
IC25  
IC90  
ICM  
TC = 25°C  
50  
24  
A
A
A
TC = 90°C  
TC = 25°C, 1ms  
150  
G
E
C (TAB)  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 50  
A
(RBSOA)  
Clamped inductive load  
@ 0.8 • VCES  
G = Gate  
C
= Collector  
E = Emitter  
TAB = Collector  
tSC  
VGE = 15V, TVJ = 125°C, VCE = 1000V  
10  
μs  
(SCSOA)  
RG = 5Ω, non repetitive  
Features  
PC  
TC = 25°C  
250  
W
z International standard packages  
JEDEC TO-268 and  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
JEDEC TO-247 AD  
TJM  
Tstg  
z High current handling capability  
z MOS Gate turn-on  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
- drive simplicity  
z Rugged NPT structure  
z Molding epoxies meet UL94V-0  
flammability classification  
Md  
Mounting torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
Applications  
z Capacitor discharge & pulser circuits  
z AC motor speed control  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ.  
Max.  
z DC servo and robot drives  
z DC choppers  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
1700  
3.0  
V
V
z Uninterruptible power supplies (UPS)  
z Switched-mode and resonant-mode  
power supplies  
5.0  
VCE = 0.8 • VCES  
VGE = 0V  
50 μA  
500 μA  
TJ = 125°C  
TJ = 125°C  
Advantages  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
z High power density  
z Suitable for surface mounting  
z Easy to mount with 1 screw,  
(isolated mounting screw hole)  
VCE(sat)  
IC = IC90, VGE = 15V, Note 1  
2.5  
3.0  
3.3  
V
© 2008 IXYS CORPORATION, All rights reserved  
DS98994A(09/08)  

与IXGT24N170相关器件

型号 品牌 获取价格 描述 数据表
IXGT24N170A IXYS

获取价格

High Voltage IGBTs
IXGT24N170A LITTELFUSE

获取价格

功能与特色: 应用:?
IXGT24N170AH1 IXYS

获取价格

High Voltage IGBTs w/Diode
IXGT24N170AH1 LITTELFUSE

获取价格

功能与特色: 应用:?
IXGT24N60B IXYS

获取价格

Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-268AA, D3PAK-3
IXGT24N60C IXYS

获取价格

HiPerFAST IGBT Lightspeed Series
IXGT24N60CD1 IXYS

获取价格

HiPerFAST IGBT with Diode Lightspeed Series
IXGT25N160 IXYS

获取价格

High Voltage IGBT
IXGT25N160 LITTELFUSE

获取价格

功能与特色: 应用:?
IXGT25N250 IXYS

获取价格

High Voltage IGBT For Capacitor Discharge Applications