Datasheet > IXGT20N140C3H1

IXGT20N140C3H1

更新时间： 2024-12-01 14:56:15

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
3页	178K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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数据手册

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IXGT20N140C3H1 数据手册

Advance Technical Information

GenX3^TM1400V IGBTs

w/ Diode

V_CES= 1400V

I_C100= 20A

V_CE(sat)≤ 5.0V

t_fi(typ)= 32ns

IXGH20N140C3H1

IXGT20N140C3H1

High-Speed PT IGBTs

for 20 - 50 kHz Switching

TO-247 (IXGH)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

1400

C (Tab)

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C100

T_C= 25°C

T_C= 100°C

TO-268 (IXGT)

I_CM

T_C= 25°C, 1ms

108

I_A

E_AS

T_C= 25°C

400

C (Tab)

SSOA

(RBSOA)

V_GE= 15V, T_J= 125°C, R_G= 5Ω

Clamped Inductive Load

I_CM= 40

V_CE≤ V_CES

G = Gate

= Collector

E = Emitter

Tab = Collector

P_C

T_C= 25°C

250

T_J

T_JM

T_stg

-55 ... +150

150

°C

Features

-55 ... +150

^zOptimized for Low Switching Losses

^zSquare RBSOA

^zHigh Avalanche Capability

^zAnti-Parallel Ultra Fast Diode

^zInternational Standard Packages

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

M_d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

Weight

TO-247

TO-268

Advantages

^zHigh Power Density

^zLow Gate Drive Requirement

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.0

^zHigh Frequency Power Inverters

^zUPS

V_CE= V_CES, V_GE= 0V

100 μA

T_J= 125°C, Note 1

2.0 mA

^zMotor Drives

^zSMPS

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C

= I_C100, V_GE= 15V, Note 1

T_J= 125°C

4.0

3.5

5.0

DS100251(03/10)

12 3

中文翻译

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