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IXGK28N140B3H1 PDF预览

IXGK28N140B3H1

更新时间: 2024-11-21 11:14:11
品牌 Logo 应用领域
IXYS 二极管双极性晶体管
页数 文件大小 规格书
7页 199K
描述
GenX3 1400V IGBTs w/ Diode

IXGK28N140B3H1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-264AA
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.81
外壳连接:COLLECTOR最大集电极电流 (IC):60 A
集电极-发射极最大电压:1400 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):915 ns
标称接通时间 (ton):66 nsBase Number Matches:1

IXGK28N140B3H1 数据手册

 浏览型号IXGK28N140B3H1的Datasheet PDF文件第2页浏览型号IXGK28N140B3H1的Datasheet PDF文件第3页浏览型号IXGK28N140B3H1的Datasheet PDF文件第4页浏览型号IXGK28N140B3H1的Datasheet PDF文件第5页浏览型号IXGK28N140B3H1的Datasheet PDF文件第6页浏览型号IXGK28N140B3H1的Datasheet PDF文件第7页 
GenX3TM 1400V  
IGBTs w/ Diode  
VCES = 1400V  
IC110 = 28A  
VCE(sat) 3.60V  
IXGH28N140B3H1  
IXGX28N140B3H1  
IXGK28N140B3H1  
Avalanche Rated  
TO-247 (IXGH)  
G
C
Tab  
E
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
PLUS247 (IXGX)  
1400  
1400  
±20  
V
VCGR  
V
V
V
VGES  
VGEM  
Transient  
±30  
G
C
E
IC25  
IC110  
IF110  
ICM  
TC = 25°C  
60  
28  
A
A
A
A
Tab  
TC = 110°C  
TC = 110°C  
TC = 25°C, 1ms  
15  
TO-264 (IXGK)  
150  
IA  
EAS  
TC = 25°C  
TC = 25°C  
28  
360  
A
mJ  
G
C
E
SSOA  
(RBSOA)  
VGE= 15V, TVJ = 125°C, RG = 5Ω  
Clamped Inductive Load  
ICM = 120  
A
@ VCES < VCE  
Tab  
PC  
TC = 25°C  
300  
W
G = Gate  
C = Collector  
E
= Emitter  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Tab = Collector  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
z
Optimized for Low Conduction and  
Switching Losses  
Square RBSOA  
Avalanche Rated  
Anti-Parallel Ultra Fast Diode  
High Current Handling Capability  
z
z
Md  
FC  
Mounting Torque (IXGH & IXGK)  
Mounting Force (IXGX)  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
z
z
Weight  
TO-247 & PLUS247  
TO-264  
6
10  
g
g
Advantages  
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
z
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
VCE = VCES, VGE = 0V  
50 μA  
z
Note 2, TJ = 125°C  
1 mA  
z
z
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z
z
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
TJ = 125°C  
3.00  
3.05  
3.60  
V
z
DS99736A(11/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  

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