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IXGK50N60B PDF预览

IXGK50N60B

更新时间: 2024-11-17 23:15:07
品牌 Logo 应用领域
IXYS 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
4页 184K
描述
HiPerFAST IGBT

IXGK50N60B 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-264AA
包装说明:TO-264AA, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.66
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):75 A集电极-发射极最大电压:600 V
配置:SINGLE门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):450 ns标称接通时间 (ton):100 ns
Base Number Matches:1

IXGK50N60B 数据手册

 浏览型号IXGK50N60B的Datasheet PDF文件第2页浏览型号IXGK50N60B的Datasheet PDF文件第3页浏览型号IXGK50N60B的Datasheet PDF文件第4页 
HiPerFASTTM IGBT  
IXGH 50N60B  
IXGK 50N60B  
IXGT 50N60B  
IXGJ 50N60B  
VCES = 600 V  
IC25 = 75 A  
VCE(sat) = 2.3 V  
tfi(typ)  
= 120 ns  
TO-247 AD (IXGH)  
C
E
C (TAB)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TO-268 (D3) ( IXGT)  
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C (TAB)  
E
IC25  
IC90  
ICM  
TC = 25°C  
75  
50  
A
A
A
TO-268 Leaded (IXGJ)  
TC = 90°C  
TC = 25°C, 1 ms  
200  
G
C
E
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load  
ICM = 100  
@ 0.8 VCES  
A
(TAB)  
PC  
TC = 25°C  
300  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TO-264 AA
TJM  
Tstg  
-55 ... +150  
Md  
Mounting torque  
TO-247AD  
TO-264  
1.13/10 Nm/lb.in.  
0.9/6 Nm/lb.in.  
G
C (TAB)  
C
E
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
G = Gate  
E=Emitter  
D = Drain  
TAB = Collector  
Weight  
TO-247  
TO-264  
TO-268  
6
10  
4
g
g
g
Features  
• International standard packages  
• High frequency IGBT  
• Latest generation HDMOSTM process  
• High current handling capability  
• MOS Gate turn-on  
- drive simplicity  
Symbol  
BVCES  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Applications  
Min. Typ. Max.  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptible power supplies (UPS)  
• Switch-mode and resonant-mode  
power supplies  
IC = 250µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
600  
V
V
VGE(th)  
ICES  
2.5  
5.0  
VCE = 0.8 • VCES  
VGE = 0 V  
T = 25°C  
TJJ = 125°C  
200 µA  
mA  
1
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
2.3  
• Easy to mount with 1 screw  
(insulated mounting screw hole)  
• Switching speed for high frequency  
applications  
VCE(sat)  
IC = IC90, VGE = 15 V  
V
• High power density  
95585F(12/02)  
© 2002 IXYS All rights reserved  

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