Datasheet > 晶体管 > IGBT> IXGK50N90B2D1

IXGK50N90B2D1

更新时间： 2024-01-06 04:00:18

品牌	Logo	应用领域
IXYS		晶体二极管晶体管功率控制双极性晶体管局域网
页数	文件大小	规格书
7页	201K
描述
HiPerFAST IGBT with Fast Diode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXGK50N90B2D1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

IXGK50N90B2D1 数据手册

HiPerFAST^TM

IGBT with Fast

Diode

IXGH 50N90B2D1

IXGK 50N90B2D1

IXGX 50N90B2D1

V_CES

I_C25

= 900 V

= 75 A

V_CE(sat)= 2.7 V

t_fityp

= 200 ns

B2-Class High Speed IGBT

with Fast Diode

PreliminaryDataSheet

Symbol

Test Conditions

Maximum Ratings

TO-247 (IXGH)

V_CES

V_CGR

T_J= 25°C to 150°C

900

T_J= 25°C to 150°C; R_GE= 1 MΩ

C (TAB)

V_GES

V_GEM

Continuous

Transient

± 20

± 30

I_C25

I_C110

I_CM

T_C= 25°C (limited by leads)

T_C= 110°C

PLUS247 (IXGX)

T_C= 25°C, 1 ms

200

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 10 Ω

^{Clamped inductive load @}≤ 600V

I_CM= 100

C (TAB)

(RBSOA)

P_C

T_C= 25°C

400

T_J

-55 ... +150

150

°C

TO-264 (IXGK)

T_JM

T_stg

-55 ... +150

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

C (TAB)

M_d

Mounting torque (TO-247, TO-264)

1.13/10Nm/lb.in.

F_C

Mounting force (PLUS247)

20..120 / 4.5..25

N/lb

G = Gate

E=Emitter

C = Collector

TAB = Collector

Weight

TO-247

TO-264

PLUS247

Features

ꢀ

High frequency IGBT

High current handling capability

MOS Gate turn-on

ꢀ

Symbol

TestConditions

Characteristic Values

min. typ. max.

- drive simplicity

(T_J= 25°C unless otherwise specified)

Applications

ꢀ

V_GE(th)

I_C= 250 μA, V_CE= V_GE

3.0

5.0

PFC circuits

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

ꢀ

I_CES

V_CE= V_CES

V_GE= 0 V

μA

T_J= 150°C

T_J= 125°C

power supplies

AC motor speed control

DC servo and robot drives

DC choppers

ꢀ

I_GES

V_CE= 0 V, V_GE= ± 20 V

± 100

ꢀ

V_CE(sat)

I_C= I_C110, V_GE= 15 V, Note 1

2.2

2.7

Advantages

ꢀ

High power density

Very fast switching speeds for high

ꢀ

frequency applications

DS99393(01/06)

12 3 4 5 6 7

中文翻译

下载PDF

与IXGK50N90B2D1相关器件

型号	品牌	获取价格	描述	数据表
IXGK55N120A3D1	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel,
IXGK55N120A3H1	IXYS	获取价格	GenX3 1200V IGBTs w/ Diode
IXGK55N120A3H1	LITTELFUSE	获取价格	IXYS系列穿通型（PT）IGBT具有高增益、极快速切换和低传导损耗等优点。这些产品针对
IXGK60N60	IXYS	获取价格	Ultra-Low VCE(sat) IGBT
IXGK60N60B2D1	IXYS	获取价格	HiPerFAST IGBT with Diode
IXGK60N60C2D1	IXYS	获取价格	HiPerFASTTM IGBT with Diode
IXGK60N60C2D1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGK64N60B3D1	IXYS	获取价格	GenX3 600V IGBT with Diode
IXGK64N60B3D1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGK72N60A3H1	IXYS	获取价格	GenX3 600V IGBT w/Diode