型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IXGK50N60A2U1 | IXYS |
类似代替 |
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 | |
IXGK50N60AU1 | IXYS |
类似代替 |
HiPerFAST IGBT with Diode |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGK72N60B3H1 | IXYS |
获取价格 |
GenX3 600V IGBT with Diode | |
IXGK72N60B3H1 | LITTELFUSE |
获取价格 |
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 | |
IXGK75N250 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 180A I(C), 2500V V(BR)CES, N-Channel, TO-264AA, TO-264, | |
IXGK75N250 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 180A I(C), 2500V V(BR)CES, N-Channel, TO-264AA, PLASTIC | |
IXGK75N60B | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264AA, | |
IXGK80N60A | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGK82N120A3 | IXYS |
获取价格 |
GenX3 1200V IGBTs | |
IXGK82N120A3 | LITTELFUSE |
获取价格 |
IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对 | |
IXGK82N120B3 | IXYS |
获取价格 |
GenX3 1200V IGBTs | |
IXGK82N120B3 | LITTELFUSE |
获取价格 |
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 |