是否Rohs认证: | 不符合 | 生命周期: | Contact Manufacturer |
包装说明: | , | Reach Compliance Code: | not_compliant |
风险等级: | 5.76 | Is Samacsys: | N |
最大集电极电流 (IC): | 20 A | 集电极-发射极最大电压: | 500 V |
最大降落时间(tf): | 500 ns | 门极发射器阈值电压最大值: | 5 V |
门极-发射极最大电压: | 30 V | JESD-609代码: | e0 |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 100 W | 最大上升时间(tr): | 200 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGM10N50A | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | TO-204AE |
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IXGM10N60 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-204AE |
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IXGM10N60A | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-204AE |
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IXGM10N80A | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 800V V(BR)CES | 20A I(C) | TO-204AE |
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IXGM10N90A | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 900V V(BR)CES | 20A I(C) | TO-204AE |
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IXGM17N100 | IXYS |
获取价格 |
Low VCE(sat) IGBT, High speed IGBT |
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IXGM17N100A | IXYS |
获取价格 |
Low VCE(sat) IGBT, High speed IGBT |
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IXGM20N100 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 40A I(C) | TO-204AE |
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IXGM20N100A | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 40A I(C) | TO-204AE |
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IXGM20N50 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 40A I(C) | TO-204AE |
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