Datasheet > IXGM25N100A

IXGM25N100A

更新时间： 2024-11-25 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		超快恢复二极管开关双极性晶体管
页数	文件大小	规格书
5页	655K
描述
IXYS系列穿通型（PT）IGBT具有高增益、极快速切换和低传导损耗等优点。这些产品针对UPS、离线式开关电源和电磁炉等高达100kHz的高速应用进行了优化。 G系列可提供带集成式超快恢复二极管（FRED）或不带FRED的型号。

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中文翻译

获取价格

数据手册

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IXGM25N100A 数据手册

V_CES

I_C25V_CE(sat)

Low V_CE(sat)

High speed IGBT

IXGH/IXGM 25 N100 1000 V 50 A 3.5 V

IXGH/IXGM 25 N100A 1000 V 50 A 4.0 V

Symbol

TestConditions

Maximum Ratings

TO-247 AD (IXGH)

V_CES

V_CGR

T_J= 25°C to 150°C

1000

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C90

I_CM

T_C= 25°C

TO-204 AE (IXGM)

T_C= 90°C

T_C= 25°C, 1 ms

100

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 33 Ω

Clamped inductive load, L = 100 µH

I_CM= 50

@ 0.8 V_CES

P_C

T_C= 25°C

200

T_J

-55 ... +150

150

°C

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

T_JM

T_stg

-55 ... +150

M_d

Mounting torque (M3)

1.13/10 Nm/lb.in.

Features

International standard packages

2nd generation HDMOS^TMprocess

Low V_CE(sat)

- for low on-state conduction losses

High current handling capability

MOS Gate turn-on

Weight

TO-204 = 18 g, TO-247 = 6 g

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

- drive simplicity

Voltage rating guaranteed at high

temperature (125°C)

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Applications

AC motor speed control

DC servo and robot drives

DC choppers

Uninterruptible power supplies (UPS)

Switch-mode and resonant-mode

power supplies

BV_CES

V_GE(th)

I_C= 3 mA, V_GE= 0 V

1000

2.5

I_C= 250 µA, V_CE= V_GE

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

250 µA

I_GES

V_CE= 0 V, V_GE= ±20 V

±100 nA

Advantages

Easy to mount with 1 screw (TO-247)

V_CE(sat)

I_C= I_C90, V_GE= 15 V

25N100

25N100A

3.5

4.0

(isolated mounting screw hole)

High power density

91516E (3/96)

12 3 4 5

中文翻译

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与IXGM25N100A相关器件

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IXGM25N80	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 800V V(BR)CES \| 50A I(C) \| TO-204AE
IXGM25N80A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 800V V(BR)CES \| 50A I(C) \| TO-204AE
IXGM25N90	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 900V V(BR)CES \| 50A I(C) \| TO-204AE
IXGM25N90A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 900V V(BR)CES \| 50A I(C) \| TO-204AE
IXGM30N50	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 500V V(BR)CES \| 50A I(C) \| TO-204AE
IXGM30N50A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 500V V(BR)CES \| 50A I(C) \| TO-204AE
IXGM30N60	IXYS	获取价格	Low VCE(sat) IGBT, High speed IGBT
IXGM30N60A	IXYS	获取价格	Low VCE(sat) IGBT, High speed IGBT
IXGM40N50A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 500V V(BR)CES \| TO-3
IXGM40N60	IXYS	获取价格	Low VCE(sat) IGBT, High speed IGBT