IXGK80N60A

更新时间： 2024-01-13 04:01:20

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
2页	45K
描述
HiPerFAST IGBT

阅读下载

中文翻译

获取价格

数据手册

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IXGK80N60A 数据手册

Preliminary data

V_CES

I_C25

= 600 V

80 A

IXGK80N60A

HiPerFAST^TMIGBT

V_CE(sat)= 2.7 V

t_fi

= 275 ns

Symbol

TestConditions

Maximum Ratings

TO-264 AA

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C90

I_CM

T_C= 25°C, limited by leads

T_C= 90°C

G = Gate

E = Emitter

C = Collector

TAB = Collector

T_C= 25°C, 1 ms

200

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 10 Ω

I_CM= 100

(RBSOA)

Clamped inductive load, L = 30 µH

@ 0.8 V_CES

P_C

T_C= 25°C

500

Features

T_J

-55 ... +150

150

°C

T_JM

T_stg

• International standard package

JEDEC TO-264 AA

-55 ... +150

• Two mached dice connected in parallel

• Low V_CE(sat)

M_d

Mounting torque (M4)

0.9/6 Nm/lb.in.

Weight

- for minimum on-state conduction

losses

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10s

300

°C

• MOS Gate turn-on

- drive simplicity

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

• Uninterruptible power supplies (UPS)

• Switch-mode and resonant-mode

power supplies

BV_CES

V_GE(th)

I_C= 500 µA, V_GE= 0 V

I_C= 500 µA, V_CE= V_GE

600

2.5

Advantages

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

400

µA

• Easy to mount with 1 screw

(isolated mounting screw hole)

• Reduces assembly time and cost

• High power density

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

V_CE(sat)

I_C= I_C90, V_GE= 15 V

2.7

96524A (5/97)

中文翻译

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