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IXGK82N120B3 PDF预览

IXGK82N120B3

更新时间: 2024-11-21 14:56:43
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
7页 245K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGK82N120B3 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.68
Is Samacsys:NBase Number Matches:1

IXGK82N120B3 数据手册

 浏览型号IXGK82N120B3的Datasheet PDF文件第2页浏览型号IXGK82N120B3的Datasheet PDF文件第3页浏览型号IXGK82N120B3的Datasheet PDF文件第4页浏览型号IXGK82N120B3的Datasheet PDF文件第5页浏览型号IXGK82N120B3的Datasheet PDF文件第6页浏览型号IXGK82N120B3的Datasheet PDF文件第7页 
Advance Technical Information  
GenX3TM 1200V  
IGBTs  
VCES = 1200V  
IC110 = 82A  
VCE(sat) 3.20V  
IXGK82N120B3  
IXGX82N120B3  
High-Speed Low-Vsat PT IGBTs  
for 3 - 20 kHz Switching  
TO-264 (IXGK)  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
1200  
1200  
±20  
V
V
V
V
G
VCGR  
C
(TAB)  
E
VGES  
VGEM  
Transient  
±30  
PLUS247TM (IXGX)  
IC25  
TC = 25°C ( Chip Capability )  
TC = 110°C  
230  
82  
A
A
A
A
IC110  
ILRMS  
ICM  
TC = 25°C ( Lead RMS Limit )  
TC = 25°C, 1ms  
120  
500  
IA  
EAS  
TC = 25°C  
TC = 25°C  
41  
A
750  
mJ  
G
C
E
(TAB)  
SSOA  
VGE= 15V, TVJ = 125°C, RG = 2Ω  
ICM = 164  
A
(RBSOA)  
Clamped Inductive Load  
VCE < VCES  
G = Gate  
C = Collector  
E
= Emitter  
PC  
TC = 25°C  
1250  
W
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
z Optimized for Low Conduction and  
Switching Losses  
z Square RBSOA  
Md  
FC  
Mounting Torque ( IXGK )  
Mounting Force ( IXGX )  
1.13/10  
Nm/lb.in.  
N/lb.  
z High Avalanche Capability  
z International Standard Packages  
20..120/4.5..14.6  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z Low Gate Drive Requirement  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VCE = 0V  
IC = 1mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
5.0  
V
z Power Inverters  
z UPS  
z SMPS  
50 μA  
5 mA  
TJ = 125°C, Note 1  
z PFC Circuits  
z Welding Machines  
z Lamp Ballasts  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = IC110, VGE = 15V, Note 2  
TJ = 125°C  
2.70  
2.64  
3.20  
V
V
DS100155(05/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

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