生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.68 |
Is Samacsys: | N | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGL200N60B3 | IXYS |
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GenX3 600V IGBT | |
IXGL200N60B3 | LITTELFUSE |
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GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 | |
IXGL50N60BD1 | IXYS |
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Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, ISOPLUS-264, 3 PIN | |
IXGL75N250 | LITTELFUSE |
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NPT IGBT拥有方形RBSOA和10 us的短路耐受能力。 具有正温度系数Vce(sa | |
IXGL75N60BU1 | IXYS |
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Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, ISOPLUS-264, 3 PIN | |
IXGM10N100A | ETC |
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TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 20A I(C) | TO-204AE | |
IXGM10N50 | ETC |
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TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | TO-204AE | |
IXGM10N50A | ETC |
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TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | TO-204AE | |
IXGM10N60 | ETC |
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-204AE | |
IXGM10N60A | ETC |
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-204AE |