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IXGK64N60B3D1 PDF预览

IXGK64N60B3D1

更新时间: 2024-11-19 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 209K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGK64N60B3D1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.38JESD-609代码:e1
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)

IXGK64N60B3D1 数据手册

 浏览型号IXGK64N60B3D1的Datasheet PDF文件第2页浏览型号IXGK64N60B3D1的Datasheet PDF文件第3页浏览型号IXGK64N60B3D1的Datasheet PDF文件第4页浏览型号IXGK64N60B3D1的Datasheet PDF文件第5页浏览型号IXGK64N60B3D1的Datasheet PDF文件第6页浏览型号IXGK64N60B3D1的Datasheet PDF文件第7页 
GenX3TM 600V IGBT  
with Diode  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 64A  
£ 1.8V  
= 88ns  
IXGK64N60B3D1  
IXGX64N60B3D1  
Medium speed low Vsat PT  
IGBTs 5-40 kHz switching  
TO-264 (IXGK)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
600  
600  
V
V
G
C
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
IC110  
TC = 110°C  
64  
400  
A
A
A
PLUS247 (IXGX)  
ICM  
TC = 25°C, 1ms  
SSOA  
(RBSOA)  
PC  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
ICM = 200  
Clamped inductive load @ VCE 600V  
TC = 25°C  
460  
W
G
C
E
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate  
C
= Collector  
-55 ... +150  
E = Emitter  
TAB = Collector  
Md  
FC  
Mounting torque (TO-264)  
Mounting force (PLUS247)  
1.13 / 10  
20..120 / 4.5..27  
Nm/lb.in.  
N/lb.  
Features  
TL  
TSOLD  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
z Optimized for low conduction and  
switching losses  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z Square RBSOA  
z Anti-parallel ultra fast diode  
z International standard packages  
Advantages  
z High power density  
z Low gate drive requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
z Power Inverters  
z UPS  
VCE = VCES  
VGE = 0V  
700  
2.5 mA  
μA  
z Motor Drives  
z SMPS  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100  
1.80  
nA  
V
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
VCE(sat)  
IC = 50A, VGE = 15V, Note 1  
1.59  
DS99939A(06/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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