Datasheet > IXGK64N60B3D1

IXGK64N60B3D1

更新时间： 2024-11-18 11:14:11

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
7页	181K
描述
GenX3 600V IGBT with Diode

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IXGK64N60B3D1 数据手册

GenX3^TM600V IGBT

with Diode

V_CES

I_C110

V_CE(sat)

t_fi(typ)

= 600V

= 64A

≤£ 1.8V

= 88ns

IXGK64N60B3D1

IXGX64N60B3D1

Medium speed low Vsat PT

IGBTs 5-40 kHz switching

TO-264 (IXGK)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

600

V_GES

V_GEM

Continuous

Transient

±20

±30

(TAB)

I_C110

T_C= 110°C

400

PLUS247 (IXGX)

I_CM

T_C= 25°C, 1ms

SSOA

(RBSOA)

P_C

V_GE= 15V, T_VJ= 125°C, R_G= 3Ω

I_CM= 200

Clamped inductive load @ V_CE≤ 600V

T_C= 25°C

460

TAB

T_J

-55 ... +150

150

°C

T_JM

T_stg

G = Gate

= Collector

-55 ... +150

E = Emitter

TAB = Collector

M_d

F_C

Mounting torque (TO-264)

Mounting force (PLUS247)

1.13 / 10

20..120 / 4.5..27

Nm/lb.in.

N/lb.

Features

T_L

T_SOLD

Maximum lead temperature for soldering

1.6mm (0.062 in.) from case for 10s

300

260

°C

^zOptimized for low conduction and

switching losses

Weight

TO-264

PLUS247

^zSquare RBSOA

^zAnti-parallel ultra fast diode

^zInternational standard packages

Advantages

^zHigh power density

^zLow gate drive requirement

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

Applications

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.0

^zPower Inverters

^zUPS

V_CE= V_CES

V_GE= 0V

700

2.5 mA

μA

^zMotor Drives

^zSMPS

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ±20V

±100

1.80

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

V_CE(sat)

I_C= 50A, V_GE= 15V, Note 1

1.59

DS99939A(06/08)

12 3 4 5 6 7

中文翻译

下载PDF

IXGK64N60B3D1 替代型号

型号	品牌	替代类型	描述	数据表
IXGK60N60B2D1	IXYS	类似代替	HiPerFAST IGBT with Diode

与IXGK64N60B3D1相关器件

型号	品牌	获取价格	描述	数据表
IXGK72N60A3H1	IXYS	获取价格	GenX3 600V IGBT w/Diode
IXGK72N60A3H1	LITTELFUSE	获取价格	IXYS系列穿通型（PT）IGBT具有高增益、极快速切换和低传导损耗等优点。这些产品针对
IXGK72N60B3H1	IXYS	获取价格	GenX3 600V IGBT with Diode
IXGK72N60B3H1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGK75N250	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 180A I(C), 2500V V(BR)CES, N-Channel, TO-264AA, TO-264,
IXGK75N250	IXYS	获取价格	Insulated Gate Bipolar Transistor, 180A I(C), 2500V V(BR)CES, N-Channel, TO-264AA, PLASTIC
IXGK75N60B	IXYS	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264AA,
IXGK80N60A	IXYS	获取价格	HiPerFAST IGBT
IXGK82N120A3	IXYS	获取价格	GenX3 1200V IGBTs
IXGK82N120A3	LITTELFUSE	获取价格	IXYS系列穿通型（PT）IGBT具有高增益、极快速切换和低传导损耗等优点。这些产品针对