Datasheet > IXGK50N60BD1

IXGK50N60BD1

更新时间： 2024-11-18 11:14:11

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
5页	124K
描述
HiPerFAST IGBT with Diode

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中文翻译

获取价格

数据手册

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IXGK50N60BD1 数据手册

HiPerFAST^TM

IGBT with Diode

IXGK 50N60BD1

IXGX 50N60BD1

V_CES

I_C25

= 600 V

= 75 A

V_CE(sat)= 2.3 V

t_fi

85 ns

Symbol

TestConditions

MaximumRatings

TO-264 AA

(IXGK)

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MW

(TAB)

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C90

I_CM

T_C= 25°C

PLUS247

(IXGX)

T_C= 90°C

T_C= 25°C, 1 ms

200

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 10 W

Clamped inductive load, L = 30 mH

I_CM= 100

(RBSOA)

@ 0.8 V_CES

G = Gate

C = Collector

P_C

T_C= 25°C

300

E = Emitter

Tab = Collector

T_J

-55 ... +150

150

°C

Features

• Internationalstandardpackages

T_JM

T_stg

-55 ... +150

JEDEC TO-268 and PLUS247 (hole-

less TO-247)

• High frequency IGBT and antparallel

FRED in one package

M_d

Mountingtorque, TO-247AD

1.13/10 Nm/lb.in.

Weight

TO-264

TO-268

• New generation HDMOS^TMprocess

• Highcurrenthandlingcapability

• MOS Gate turn-on fordrive simplicity

• Fast Recovery Epitaxial Diode

(FRED) with soft recovery and low I_RM

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Symbol

BV_CES

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptiblepowersupplies(UPS)

• Switch-modeandresonant-mode

powersupplies

I_C= 1 mA, V_GE= 0 V

500

2.5

V_GE(th)

I_CES

I_C= 500 mA, V_CE= V_GE

5.5

V_CE= V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

650 mA

Advantages

• Space savings (two devices on one

package

I_GES

V_CE= 0 V, V_GE= ±20 V

±100 nA

2.3

V_CE(sat)

I_C= I_C90, V_GE= 15 V

• Easy to mount with 1 screw

IXYS reserves the right to change limits, test conditions, and dimensions.

98516B(7/00)

1 - 5

12 3 4 5

中文翻译

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