5秒后页面跳转
IXGK35N120BD1 PDF预览

IXGK35N120BD1

更新时间: 2024-11-05 11:14:11
品牌 Logo 应用领域
IXYS 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
2页 1847K
描述
HiPerFAST IGBT

IXGK35N120BD1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-264AA
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.64
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):70 A集电极-发射极最大电压:1200 V
配置:SINGLE WITH BUILT-IN DIODEJEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):660 ns标称接通时间 (ton):86 ns
Base Number Matches:1

IXGK35N120BD1 数据手册

 浏览型号IXGK35N120BD1的Datasheet PDF文件第2页 
Preliminary Data Sheet  
HiPerFASTTM IGBT  
IXGK 35N120B  
IXGX 35N120B  
IXGK 35N120BD1  
IXGX 35N120BD1  
VCES = 1200 V  
IC25  
=
70 A  
VCE(sat) = 3.3 V  
tfi(typ) = 160 ns  
(D1)  
Symbol  
TestConditions  
Maximum Ratings  
TO-264 AA (IXGK)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
C (TAB)  
E
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
70  
35  
140  
A
A
A
PLUS 247TM (IXGX)  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 5 Ω  
I
= 90  
A
(RBSOA)  
CGlaE mped inductive load  
@ 0C.8M VCES  
350  
PC  
TC = 25°C  
W
C (TAB)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
C
E
G = Gate,  
C = Collector,  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
E = Emitter,  
TAB = Collector  
Features  
Md  
Mounting torque (M3) (IXGK)  
1.13/10Nm/lb.in.  
International standard packages  
JEDEC TO-264 and PLUS247TM  
Weight  
TO-264AA  
PLUS247TM  
10  
6
g
g
Low switching losses, low V(sat)  
MOS Gate turn-on  
- drive simplicity  
Applications  
Symbol  
TestConditions  
Characteristic Values  
AC motor speed control  
(TJ = 25°C, unless otherwise specified)  
DC servo and robot drives  
min. typ. max.  
DC choppers  
Uninterruptible power supplies  
BVCES  
VGE(th)  
I
= 1 mA, V = 0 V  
1200  
2.5  
V
ICC = 750 µA,GVECE = VGE  
5
V
(UPS)  
Switched-mode and resonant-mode  
power supplies  
ICES  
VCE = V  
T = 25°C  
TJJ = 125°C  
250  
5
µA  
VGE = 0CVES  
mA  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
High power density  
Easy to mount with 1 screw,  
VCE(sat)  
IC = IC90, VGE = 15 V  
3.3  
V
V
(isolated mounting screw hole)  
TJ = 125°C  
2.7  
Spring clip or clamp assembly  
possible.  
DS98960 (10/02)  
© 2002 IXYS All rights reserved  

与IXGK35N120BD1相关器件

型号 品牌 获取价格 描述 数据表
IXGK35N120C IXYS

获取价格

HiPerFAST IGBT
IXGK35N120CD1 IXYS

获取价格

HiPerFAST IGBT
IXGK400N30A3 IXYS

获取价格

GenX3 300V IGBTs
IXGK400N30A3 LITTELFUSE

获取价格

IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对
IXGK50N120C3H1 IXYS

获取价格

GenX3 1200V IGBTs w/ Diode
IXGK50N120C3H1 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGK50N50BU1 IXYS

获取价格

HiPerFAST IGBT with Diode
IXGK50N60A2D1 IXYS

获取价格

IGBT with Diode
IXGK50N60A2U1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3
IXGK50N60AU1 IXYS

获取价格

HiPerFAST IGBT with Diode