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IXGK50N120C3H1 PDF预览

IXGK50N120C3H1

更新时间: 2024-11-21 14:56:47
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
7页 245K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGK50N120C3H1 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.73
Is Samacsys:NBase Number Matches:1

IXGK50N120C3H1 数据手册

 浏览型号IXGK50N120C3H1的Datasheet PDF文件第2页浏览型号IXGK50N120C3H1的Datasheet PDF文件第3页浏览型号IXGK50N120C3H1的Datasheet PDF文件第4页浏览型号IXGK50N120C3H1的Datasheet PDF文件第5页浏览型号IXGK50N120C3H1的Datasheet PDF文件第6页浏览型号IXGK50N120C3H1的Datasheet PDF文件第7页 
Preliminary Technical Information  
GenX3TM 1200V  
IGBTs w/ Diode  
VCES = 1200V  
IC100 = 50A  
VCE(sat) 4.2V  
tfi(typ) = 64ns  
IXGK50N120C3H1  
IXGX50N120C3H1  
High-Speed PT IGBTs  
for 20 - 50 kHz Switching  
TO-264 (IXGK)  
G
C
E
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
Tab  
TJ = 25°C to 150°C, RGE = 1MΩ  
PLUS247 (IXGX)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC100  
IF110  
TC = 25°C ( Chip Capability )  
TC = 100°C  
TC = 110°C  
95  
50  
58  
A
A
A
G
ICM  
TC = 25°C, 1ms  
240  
A
C
Tab  
E
IA  
EAS  
TC = 25°C  
TC = 25°C  
40  
750  
A
mJ  
G = Gate  
C = Collector  
E
= Emitter  
Tab = Collector  
SSOA  
(RBSOA)  
VGE= 15V, TJ = 125°C, RG = 3Ω  
Clamped Inductive Load  
ICM = 100  
A
VCE VCES  
PC  
TC = 25°C  
460  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
z Optimized for Low Switching Losses  
z Square RBSOA  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
z High Avalanche Capability  
z Avalanche Rated  
Md  
FC  
Mounting Torque ( IXGK )  
Mounting Force ( IXGX )  
1.13/10  
20..120/4.5..14.6  
Nm/lb.in.  
N/lb.  
z Anti-Parallel Ultra Fast Diode  
z International Standard Packages  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
Applications  
VCE = VCES, VGE = 0V  
250 μA  
z High Frequency Power Inverters  
z UPS  
Note 1,TJ = 125°C  
14 mA  
z Motor Drives  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z SMPS  
VCE(sat)  
IC = 40A, VGE = 15V, Note 2  
4.2  
V
V
z PFC Circuits  
TJ = 125°C  
2.6  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
DS100163A(08/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  

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