Preliminary Technical Information
GenX3TM 1200V
IGBTs w/ Diode
VCES = 1200V
IC100 = 50A
VCE(sat) ≤ 4.2V
tfi(typ) = 64ns
IXGK50N120C3H1
IXGX50N120C3H1
High-Speed PT IGBTs
for 20 - 50 kHz Switching
TO-264 (IXGK)
G
C
E
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
V
Tab
TJ = 25°C to 150°C, RGE = 1MΩ
PLUS247 (IXGX)
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC100
IF110
TC = 25°C ( Chip Capability )
TC = 100°C
TC = 110°C
95
50
58
A
A
A
G
G
ICM
TC = 25°C, 1ms
240
A
C
Tab
E
IA
EAS
TC = 25°C
TC = 25°C
40
750
A
mJ
G = Gate
C = Collector
E
= Emitter
Tab = Collector
SSOA
(RBSOA)
VGE= 15V, TJ = 125°C, RG = 3Ω
Clamped Inductive Load
ICM = 100
A
VCE ≤ VCES
PC
TC = 25°C
460
W
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
Features
z Optimized for Low Switching Losses
z Square RBSOA
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300
260
°C
°C
z High Avalanche Capability
z Avalanche Rated
Md
FC
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
1.13/10
20..120/4.5..14.6
Nm/lb.in.
N/lb.
z Anti-Parallel Ultra Fast Diode
z International Standard Packages
Weight
TO-264
PLUS247
10
6
g
g
Advantages
z High Power Density
z Low Gate Drive Requirement
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
VGE(th)
ICES
IC = 250μA, VCE = VGE
3.0
5.0
V
Applications
VCE = VCES, VGE = 0V
250 μA
z High Frequency Power Inverters
z UPS
Note 1,TJ = 125°C
14 mA
z Motor Drives
IGES
VCE = 0V, VGE = ±20V
±100 nA
z SMPS
VCE(sat)
IC = 40A, VGE = 15V, Note 2
4.2
V
V
z PFC Circuits
TJ = 125°C
2.6
z Battery Chargers
z Welding Machines
z Lamp Ballasts
DS100163A(08/12)
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