是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-264AA |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.73 |
其他特性: | LOW CONDUCTION LOSS | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 95 A | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE WITH BUILT-IN DIODE | 门极发射器阈值电压最大值: | 5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-264AA |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 460 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 485 ns | 标称接通时间 (ton): | 60 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGK50N50BU1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode | |
IXGK50N60A2D1 | IXYS |
获取价格 |
IGBT with Diode | |
IXGK50N60A2U1 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 | |
IXGK50N60AU1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode | |
IXGK50N60B | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGK50N60B2D1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode | |
IXGK50N60BD1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode | |
IXGK50N60BU1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode | |
IXGK50N60C2D1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode | |
IXGK50N90B2D1 | IXYS |
获取价格 |
HiPerFAST IGBT with Fast Diode |