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IXGK50N120C3H1 PDF预览

IXGK50N120C3H1

更新时间: 2024-11-18 11:14:11
品牌 Logo 应用领域
IXYS 晶体二极管晶体管功率控制瞄准线双极性晶体管局域网
页数 文件大小 规格书
6页 217K
描述
GenX3 1200V IGBTs w/ Diode

IXGK50N120C3H1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-264AA
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.73
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):95 A集电极-发射极最大电压:1200 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):460 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):485 ns标称接通时间 (ton):60 ns
Base Number Matches:1

IXGK50N120C3H1 数据手册

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Advance Technical Information  
GenX3TM 1200V IGBTs  
w/ Diode  
VCES = 1200V  
IC100 = 50A  
VCE(sat) 4.2V  
tfi(typ) = 64ns  
IXGK50N120C3H1  
IXGX50N120C3H1  
High-Speed PT IGBTs  
for 20 - 50 kHz Switching  
TO-264 (IXGK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
(TAB)  
E
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247TM (IXGX)  
IC25  
IC100  
ICM  
TC = 25°C ( Chip Capability )  
TC = 100°C  
95  
50  
A
A
A
TC = 25°C, 1ms  
240  
IA  
EAS  
TC = 25°C  
TC = 25°C  
40  
750  
A
mJ  
G
C
E
(TAB)  
SSOA  
VGE= 15V, TJ = 125°C, RG = 3Ω  
ICM = 100  
A
(RBSOA)  
Clamped Inductive Load  
VCE VCES  
G = Gate  
C = Collector  
E
= Emitter  
PC  
TC = 25°C  
460  
W
TAB = Collector  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
-55 ... +150  
z Optimized for Low Switching Losses  
z Square RBSOA  
z High Avalanche Capability  
z Anti-Parallel Ultra Fast Diode  
z International Standard Packages  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque ( IXGK )  
Mounting Force ( IXGX )  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120/4.5..14.6  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
z High Frequency Power Inverters  
z UPS  
VCE = VCES, VGE= 0V  
250 μA  
TJ = 125°C, Note 1  
14 mA  
z Motor Drives  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
VCE(sat)  
IC  
= 40A, VGE = 15V, Note 2  
TJ = 125°C  
4.2  
V
V
2.6  
DS100163(06/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

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