5秒后页面跳转
IXGK400N30A3 PDF预览

IXGK400N30A3

更新时间: 2024-11-05 11:14:11
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
5页 200K
描述
GenX3 300V IGBTs

IXGK400N30A3 数据手册

 浏览型号IXGK400N30A3的Datasheet PDF文件第2页浏览型号IXGK400N30A3的Datasheet PDF文件第3页浏览型号IXGK400N30A3的Datasheet PDF文件第4页浏览型号IXGK400N30A3的Datasheet PDF文件第5页 
GenX3TM 300V IGBTs  
VCES = 300V  
IC25 = 400A  
VCE(sat) 1.15V  
IXGK400N30A3  
IXGX400N30A3  
Ultra-Low Vsat PT IGBTs for  
up to 10kHz Switching  
TO-264 (IXGK)  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
G
300  
300  
±20  
±30  
V
V
V
V
C
Tab  
E
VCGR  
VGES  
PLUS247TM (IXGX)  
VGEM  
Transient  
IC25  
TC = 25°C (Chip Capability)  
TC = 110°C  
400  
200  
A
A
A
A
IC110  
ILRMS  
ICM  
Terminal Current Limit  
TC = 25°C, 1ms  
160  
1200  
G
C
E
SSOA  
(RBSOA)  
VGE= 15V, TVJ = 125°C, RG = 1Ω  
Clamped Inductive Load  
ICM = 400  
A
Tab  
@ 0.8 • VCES  
PC  
TC = 25°C  
1000  
W
G = Gate  
C = Collector  
E
= Emitter  
TJ  
TJM  
-55 ... +150  
150  
°C  
°C  
Tab = Collector  
Tstg  
-55 ... +150  
°C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
z Optimized for Low Conduction Losses  
z High Avalanche Capability  
z International Standard Packages  
Md  
FC  
Mounting Torque ( IXGK )  
Mounting Force ( IXGX )  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 1mA, VGE = 0V  
IC = 4mA, VCE = VGE  
VCE = VCES, VGE = 0V  
300  
V
V
z Power Inverters  
z UPS  
3.0  
5.0  
z Motor Drives  
50 μA  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
TJ = 125°C  
2 mA  
IGES  
VCE = 0V, VGE = ±20V  
±400 nA  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
IC = 400A  
1.15  
V
V
1.70  
DS99584B(12/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

与IXGK400N30A3相关器件

型号 品牌 获取价格 描述 数据表
IXGK50N120C3H1 IXYS

获取价格

GenX3 1200V IGBTs w/ Diode
IXGK50N120C3H1 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGK50N50BU1 IXYS

获取价格

HiPerFAST IGBT with Diode
IXGK50N60A2D1 IXYS

获取价格

IGBT with Diode
IXGK50N60A2U1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3
IXGK50N60AU1 IXYS

获取价格

HiPerFAST IGBT with Diode
IXGK50N60B IXYS

获取价格

HiPerFAST IGBT
IXGK50N60B2D1 IXYS

获取价格

HiPerFAST IGBT with Diode
IXGK50N60BD1 IXYS

获取价格

HiPerFAST IGBT with Diode
IXGK50N60BU1 IXYS

获取价格

HiPerFAST IGBT with Diode