5秒后页面跳转
IXGK35N120B PDF预览

IXGK35N120B

更新时间: 2024-11-19 14:56:35
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
3页 113K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGK35N120B 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.39

IXGK35N120B 数据手册

 浏览型号IXGK35N120B的Datasheet PDF文件第2页浏览型号IXGK35N120B的Datasheet PDF文件第3页 
Preliminary Data Sheet  
HiPerFASTTM IGBT  
IXGK 35N120B  
IXGX 35N120B  
IXGK 35N120BD1  
IXGX 35N120BD1  
VCES = 1200 V  
IC25 70 A  
VCE(sat) = 3.3 V  
tfi(typ) = 160 ns  
=
(D1)  
Symbol  
TestConditions  
Maximum Ratings  
TO-264 AA (IXGK)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
C (TAB)  
E
IC25  
IC90  
ICM  
TC = 25°C  
70  
35  
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
140  
PLUS 247TM (IXGX)  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 5 Ω  
ICM = 90  
A
(RBSOA)  
Clamped inductive load  
@ 0.8 VCES  
PC  
TC = 25°C  
350  
W
C (TAB)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G
C
E
TJM  
Tstg  
-55 ... +150  
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
Md  
Mounting torque (M3) (IXGK)  
1.13/10Nm/lb.in.  
International standard packages  
JEDEC TO-264 and PLUS247TM  
Low switching losses, low V(sat)  
MOS Gate turn-on  
Weight  
TO-264AA  
PLUS247TM  
10  
6
g
g
- drive simplicity  
Applications  
AC motor speed control  
DC servo and robot drives  
DC choppers  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Uninterruptible power supplies  
(UPS)  
BVCES  
VGE(th)  
IC = 1 mA, VGE = 0 V  
IC = 750 µA, VCE = VGE  
1200  
2.5  
V
V
5
Switched-mode and resonant-mode  
power supplies  
ICES  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
250  
5
µA  
mA  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
High power density  
Easy to mount with 1 screw,  
(isolated mounting screw hole)  
VCE(sat)  
IC = IC90, VGE = 15 V  
3.3  
V
V
TJ = 125°C  
2.7  
Spring clip or clamp assembly  
possible.  
DS98960 (10/02)  
© 2002 IXYS All rights reserved  

与IXGK35N120B相关器件

型号 品牌 获取价格 描述 数据表
IXGK35N120BD1 IXYS

获取价格

HiPerFAST IGBT
IXGK35N120C IXYS

获取价格

HiPerFAST IGBT
IXGK35N120CD1 IXYS

获取价格

HiPerFAST IGBT
IXGK400N30A3 IXYS

获取价格

GenX3 300V IGBTs
IXGK400N30A3 LITTELFUSE

获取价格

IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对
IXGK50N120C3H1 IXYS

获取价格

GenX3 1200V IGBTs w/ Diode
IXGK50N120C3H1 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGK50N50BU1 IXYS

获取价格

HiPerFAST IGBT with Diode
IXGK50N60A2D1 IXYS

获取价格

IGBT with Diode
IXGK50N60A2U1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3