生命周期: | Obsolete | 零件包装代码: | TO-247 |
包装说明: | TO-247, 2 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.68 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 60 A |
集电极-发射极最大电压: | 500 V | 配置: | SINGLE WITH BUILT-IN DIODE |
最大降落时间(tf): | 150 ns | 门极发射器阈值电压最大值: | 5.5 V |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PSFM-G2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 200 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 120 ns |
标称接通时间 (ton): | 25 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGH32N60A | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGH32N60AS | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGH32N60AU1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode Combi Pack | |
IXGH32N60AU1S | IXYS |
获取价格 |
HiPerFAST IGBT with Diode Combi Pack | |
IXGH32N60B | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGH32N60B_03 | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGH32N60BD1 | IXYS |
获取价格 |
HiPerFAST IGBTwith Diode | |
IXGH32N60BS | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD | |
IXGH32N60BU1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode | |
IXGH32N60BU1S | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD |