Datasheet > IXFT74N20

IXFT74N20

更新时间： 2024-11-04 23:16:43

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	135K
描述
HIPERFET POWER MOSFETs

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中文翻译

获取价格

数据手册

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IXFT74N20 数据手册

HiPerFET^TM

Power MOSFETs

V_DSSI_D25R_DS(on)

IXFH/IXFT68N20

IXFH/IXFT74N20

200 V 68 A 35 mW

200 V 74 A 30 mW

t_rr£ 200 ns

N-ChannelEnhancementMode

Highdv/dt, Lowt_rr, HDMOS^TMFamily

Symbol

TestConditions

Maximum Ratings

TO-247AD(IXFH)

V_DSS

V_DGR

T_J= 25°C to 150°C

200

T_J= 25°C to 150°C; R_GS= 1 MW

(TAB)

V_GS

Continuous

Transient

±20

±30

V_GSM

I_D25

I_DM

I_AR

T_C= 25°C

68N20

74N20

68N20

74N20

68N20

74N20

272

296

TO-268 (D3) ( IXFT)

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

(TAB)

E_AR

T_C= 25°C

G = Gate,

S = Source,

D = Drain,

TAB = Drain

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

V/ns

T_J£ 150°C, R_G= 2 W

P_D

T_C= 25°C

360

Features

T_J

-55 ... +150

150

°C

International standard packages

Low R

HDMOS^TMprocess

T_JM

T_stg

Rugge^Dd^{S (}p^ono⁾lysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Fast intrinsic Rectifier

-55 ... +150

T_L

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

300

°C

M_d

1.13/10 Nm/lb.in.

Weight

Applications

DC-DC converters

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Synchronous rectification

Battery chargers

min.typ.

max.

Switched-mode and resonant-mode

power supplies

V_DSS

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 4 mA

200

DC choppers

AC motor control

V_GS(th)

Temperature and lighting controls

Low voltage relays

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100

Advantages

V_DS= 0.8 V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

200

Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

High power surface package

High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

74N20

68N20

30 mW

35 mW

Pulse test, t £ 300 ms, duty cycle d £ 2 %

97522C (8/00)

中文翻译

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