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IXFT9N80Q PDF预览

IXFT9N80Q

更新时间: 2024-11-17 22:20:15
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 93K
描述
HiPerFET Power MOSFETs Q-Class

IXFT9N80Q 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-268AA
包装说明:PLASTIC, D3PAK-2针数:2
Reach Compliance Code:not_compliant风险等级:5.83
其他特性:AVALANCHE RATED雪崩能效等级(Eas):700 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:800 V最大漏极电流 (ID):9 A
最大漏源导通电阻:1.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-268AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):36 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

IXFT9N80Q 数据手册

 浏览型号IXFT9N80Q的Datasheet PDF文件第2页 
HiPerFETTM  
Power MOSFETs  
Q-Class  
IXFH 9N80Q VDSS  
IXFT 9N80Q ID25  
= 800 V  
9 A  
= 1.1 Ω  
=
RDS(on)  
t 250 ns  
N-ChannelEnhancementMode  
AvalancheRatedLowQg,Highdv/dt  
rr  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD(IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
ID25  
IDM  
TC = 25°C  
9
A
A
TC = 25°C,  
36  
pulse width limited by TJM  
TC = 25°C  
TO-268 (D3) ( IXFT)  
IAR  
9
20  
700  
5
A
mJ  
EAR  
EAS  
dv/dt  
TC = 25°C  
mJ  
G
(TAB)  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
V/ns  
S
PD  
TC = 25°C  
180  
W
G = Gate  
S = Source  
D
= Drain  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TAB = Drain  
TJM  
Tstg  
-55 ... +150  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mounting torque  
300  
°C  
Md  
1.13/10  
Nm/lb.in.  
Features  
Weight  
TO-247  
TO-268  
6
4
g
g
l
IXYS advanced low Qg process  
l
Low gate charge and capacitances  
- easier to drive  
- faster switching  
International standard packages  
Low RDS (on)  
Unclamped Inductive Switching (UIS)  
rated  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min.  
typ.  
max.  
l
l
l
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 2.5 mA  
800  
V
V
VGS(th)  
3.0  
5.0  
l
Molding epoxies meet UL 94 V-0  
flammability classification  
IGSS  
VGS = ±20 VDC, VDS = 0  
±100  
nA  
Advantages  
IDSS  
VDS = 0.8 VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
50  
1
µA  
mA  
l
Easy to mount  
Space savings  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
1.1  
l
l
© 1999 IXYS All rights reserved  
98629 (6/99)  

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