Datasheet > IXFTN100

IXFTN100

更新时间： 2024-11-04 22:32:11

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	119K
描述
HiPerFET Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXFTN100 数据手册

HiPerFET^TM

Power MOSFETs

V_DSS

I_D25

R_DS(on)

IXFH/IXFT/IXFX14N100 1000 V

IXFH/IXFT/IXFX15N100 1000 V

14 A 0.75 W

15 A 0.70 W

t_rr£ 200 ns

N-Channel Enhancement Mode

High dv/dt, Low t_rr, HDMOS^TMFamily

Preliminarydatasheet

TO-247 AD

(IXFH)

Symbol

TestConditions

MaximumRatings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MW

1000

(TAB)

V_GS

V_GSM

Continuous

Transient

±20

±30

PLUS247^TM

(IXFX)

I_D25

I_DM

I_AR

T_C= 25°C

14N100

15N100

14N100

15N100

14N100

15N100

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

(TAB)

E_AR

T_C= 25°C

TO-268 (D3)

(IXFT)

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

P_D

T_J

T_C= 25°C

360

-55 ... +150

°C

T_JM

T_stg

150

-55 ... +150

°C

Features

^●Internationalstandardpackages

^●Low R_{DS (on)}HDMOS^TMprocess

T_L

1.6 mm (0.062 in.) from case for 10 s

Mountingtorque

300

°C

^●Rugged polysilicon gate cell structure

^●UnclampedInductiveSwitching(UIS)

rated

^●Low package inductance

- easy to drive and to protect

^●Fast intrinsic Rectifier

M_d

1.13/10 Nm/lb.in.

Weight

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

Applications

●

DC-DC converters

Battery chargers

Switched-modeandresonant-mode

●

min. typ. max.

●

V_DSS

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 4 mA

1000

2.5

powersupplies

DC choppers

^●AC motor control

●

V_GS(th)

4.5

●

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100 nA

250 mA

Temperatureandlightingcontrols

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

●

Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole) or

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

14N100

15N100

0.75

0.70

mounting clip or spring (PLUS 247^TM)

●

Highpowersurfacemountablepackage

High power density

Pulse test, t £ 300 ms, duty cycle d £ 2 %

●

IXYS reserves the right to change limits, test conditions, and dimensions.

97535B(1/99)

1 - 4

12 3 4

中文翻译

下载PDF

与IXFTN100相关器件

型号	品牌	获取价格	描述	数据表
IXFV10N100P	IXYS	获取价格	Polar Power MOSFET HiPerFET
IXFV10N100PS	IXYS	获取价格	Polar Power MOSFET HiPerFET
IXFV110N10P	IXYS	获取价格	PolarHT HiPerFET Power MOSFET
IXFV110N10P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFV110N10PS	IXYS	获取价格	PolarHT HiPerFET Power MOSFET
IXFV110N25T	IXYS	获取价格	Trench Gate Power HiperFET
IXFV110N25TS	IXYS	获取价格	Trench Gate Power HiperFET
IXFV12N100P	IXYS	获取价格	Polar HiPerFET Power MOSFETs
IXFV12N100PS	IXYS	获取价格	Polar HiPerFET Power MOSFETs
IXFV12N120P	IXYS	获取价格	Polar Power MOSFET HiPerFET