Datasheet > IXFV110N10P

IXFV110N10P

更新时间： 2024-11-19 14:56:39

品牌	Logo	应用领域
力特 - LITTELFUSE		/
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6页	375K
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中文翻译

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数据手册

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IXFV110N10P 数据手册

PolarHT^TMHiPerFET

Power MOSFET

N-Channel Enhancement Mode

Fast Intrinsic Diode

IXFH 110N10P

IXFV 110N10P

IXFV 110N10PS

V_DSS= 100 V

I_D25= 110 A

R_DS(on)≤ 15 mΩ

t_rr

≤ 150 ns

Avalanche Rated

Symbol

Test Conditions

Maximum Ratings

TO-247 (IXFH)

V_DSS

V_DGR

T_J= 25° C to 175° C

100

T_J= 25° C to 175° C; R_GS= 1 MΩ

V_GSS

V_GSM

Continuous

Transient

(TAB)

I_D25

I_D(RMS)

I_DM

T_C=25° C

External lead current limit

T_C= 25° C, pulse width limited by T_JM

110

250

PLUS220 (IXFV)

I_AR

T_C=25° C

E_AR

E_AS

T_C=25° C

1.0

D (TAB)

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 4 Ω

V/ns

PLUS220SMD (IXFV...S)

T_C=25° C

480

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +150

°C

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

260

°C

D (TAB)

M_d

Mounting torque

Mounting Force

(TO-247)

1.13/10 Nm/lb.in.

G = Gate

D = Drain

F_C

(PLUS220)

11..65 / 2.5..15

N/lb

S = Source

TAB = Drain

Weight

TO-247

PLUS220

Features

Fast intrinsic diode

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Symbol

Test Conditions

Characteristic Values

(T_J= 25° C, unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 4 mA

V_GS= 20 V_DC, V_DS= 0

100

2.5

5.0

Advantages

100

Easy to mount

Space savings

High power density

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

µA

T_J= 150° C

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

15 mΩ

Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

DS99212E(01/06)

12 3 4 5 6

中文翻译

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