Datasheet > IXFP10N80P

IXFP10N80P

更新时间： 2024-11-02 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	148K
描述
PolarHV HiPerFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IXFP10N80P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

IXFA10N80P

IXFP10N80P

IXFQ10N80P

IXFH10N80P

V_DSS= 800V

I_D25= 10A

R_DS(on)≤ 1.1Ω

N-Channel Enhancement Mode

Avalanche Rated

t_rr

≤ 250ns

Fast Intrinsic Diode

TO-220AB (IXFP)

TO-3P (IXFQ)

TO-263 AA (IXFA)

D (TAB)

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-247 (IXFH)

T_J= 25°C to 150°C

800

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

±30

±40

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

D (TAB)

I_A

T_C= 25°C

G = Gate

S = Source

= Drain

TAB = Drain

E_AS

600

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

300

Features

T_J

-55 ... +150

150

°C

^zInternational Standard Packages

^zAvalanche Rated

^zLow Package Inductance

^zEasy to Drive and to Protect

T_JM

T_stg

-55 ... +150

T_L

1.6mm (0.062) from Case for 10s

Plastic Body for 10s

300

260

°C

T_SOLD

Advantages

M_d

Mounting Torque

(TO-220,TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-263

TO-220

TO-3P

2.5

3.0

5.5

6.0

Easy to Mount

Space Savings

High Power Density

TO-247

Applications

Symbol

Test Conditions

Characteristic Values

^zSwitched-Mode and Resonant-Mode

Power Supplies

(T_J= 25°C Unless Otherwise Specified)

Min.

800

3.0

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 2.5mA

V_GS= ± 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

^zDC-DC Converters

^zLaser Drivers

^zAC and DC Motor Drives

^zRobotics and Servo Controls

5.5

±100 nA

I_DSS

25 μA

T_J= 150°C

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

500 μA

R_DS(on)

1.1

DS99432F(08/09)

12 3 4 5

中文翻译

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IXFP10N80P 替代型号

型号	品牌	替代类型	描述	数据表
IXFQ10N80P	IXYS	类似代替	PolarHV HiPerFET Power MOSFET
IXFH10N80P	IXYS	功能相似	PolarHV HiPerFET Power MOSFET
IXFA10N80P	IXYS	功能相似	PolarHV HiPerFET Power MOSFET

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