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IXFP110N15T2 PDF预览

IXFP110N15T2

更新时间: 2024-09-16 14:56:35
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 339K
描述
这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能(Tc=@25oC)。 通过结合高电流额定值与紧凑的封装选择,这些尺寸更加小巧的器件能够控制更高的功率。

IXFP110N15T2 数据手册

 浏览型号IXFP110N15T2的Datasheet PDF文件第2页浏览型号IXFP110N15T2的Datasheet PDF文件第3页浏览型号IXFP110N15T2的Datasheet PDF文件第4页浏览型号IXFP110N15T2的Datasheet PDF文件第5页浏览型号IXFP110N15T2的Datasheet PDF文件第6页浏览型号IXFP110N15T2的Datasheet PDF文件第7页 
Preliminary Technical Information  
TrenchT2TM HiperFET  
Power MOSFET  
VDSS = 150V  
ID25 = 110A  
RDS(on) 13m  
IXFA110N15T2  
IXFP110N15T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263  
(IXFA)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220  
(IXFP)  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
150  
150  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
ID25  
IDM  
TC = 25C  
110  
300  
A
A
D (Tab)  
TC = 25C, Pulse Width Limited by TJM  
G = Gate  
S = Source Tab = Drain  
D
= Drain  
IA  
TC = 25C  
TC = 25C  
50  
A
EAS  
800  
mJ  
dV/dt  
PD  
IS IDM, VDD VDSS,TJ 175C  
TC = 25C  
15  
V/ns  
W
480  
Features  
TJ  
-55 ... +175  
175  
C  
C  
C  
International standard packages  
175°C Operating Temperature  
High current handling capability  
Fast intrinsic Rectifier  
TJM  
Tstg  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Dynamic dV/dt rated  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Low RDS(on)  
Nm/lb.in  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
Easy to mount  
Space savings  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ.  
High power density  
(TJ = 25C unless otherwise specified)  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
150  
2.5  
V
Applications  
4.5  
            200 nA  
A  
V
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
power supplies  
IDSS  
5
TJ = 150C  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
150  A  
13 m  
DC choppers  
AC motor drives  
RDS(on)  
11  
Uninterruptible power supplies  
High speed power switching  
applications  
DS100093A(11/18)  
© 2018 IXYS CORPORATION, All rights reserved  

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沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低