5秒后页面跳转
IXFP18N65X2M PDF预览

IXFP18N65X2M

更新时间: 2024-11-02 21:17:55
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 195K
描述
Power Field-Effect Transistor,

IXFP18N65X2M 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.34
Base Number Matches:1

IXFP18N65X2M 数据手册

 浏览型号IXFP18N65X2M的Datasheet PDF文件第2页浏览型号IXFP18N65X2M的Datasheet PDF文件第3页浏览型号IXFP18N65X2M的Datasheet PDF文件第4页浏览型号IXFP18N65X2M的Datasheet PDF文件第5页浏览型号IXFP18N65X2M的Datasheet PDF文件第6页 
Preliminary Technical Information  
X2-Class HiperFETTM  
Power MOSFET  
VDSS = 650V  
ID25 = 18A  
IXFP18N65X2M  
RDS(on) 200m  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
OVERMOLDED  
TO-220  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
650  
650  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
G
Isolated Tab  
D = Drain  
D
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G = Gate  
ID25  
IDM  
TC = 25C, Limited by TJM  
18  
22  
A
A
S = Source  
TC = 25C, Pulse Width Limited by TJM  
IA  
TC = 25C  
TC = 25C  
4
A
EAS  
300  
mJ  
Features  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
36  
V/ns  
W
International Standard Package  
Plastic Overmolded Tab  
High Voltage Package  
Low RDS(ON) and QG  
Avalanche Rated  
2500V~ Electrical Isolation  
Low Package Inductance  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
VISOL  
50/60 Hz, 1 Minute  
Mounting Torque  
2500  
V~  
Advantages  
Md  
1.13 / 10  
2.5  
Nm/lb.in  
g
Weight  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Switch-Mode and Resonant-Mode  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1.5mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
3.0  
5.0  
100 nA  
Robotics and Servo Controls  
IDSS  
25 A  
TJ = 125C  
1.5 mA  
RDS(on)  
VGS = 10V, ID = 9A, Note 1  
164  
200 m  
DS100870C(10/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  

与IXFP18N65X2M相关器件

型号 品牌 获取价格 描述 数据表
IXFP20N50P3 LITTELFUSE

获取价格

PolarP3? HiPerFET?产品系列是针对300V, 500V至600V产品系列的
IXFP20N50P3M LITTELFUSE

获取价格

PolarP3? HiPerFET?产品系列是针对300V, 500V至600V产品系列的
IXFP20N85X LITTELFUSE

获取价格

采用快速体二极管的超级结X-Class功率MOSFET是坚固耐用的器件,具有业内最低的导通
IXFP220N06T3 LITTELFUSE

获取价格

60V TrenchT3?功率MOSFET是对低压Trench MOSFET产品系列的扩展
IXFP22N60P3 IXYS

获取价格

Polar3 HiperFET Power MOSFETs
IXFP22N60P3 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFP22N65X2 LITTELFUSE

获取价格

这些新型器件采用电荷补偿原理和专有工艺技术开发,具有最低的导通电阻,以及低栅极电荷和卓越的
IXFP22N65X2M LITTELFUSE

获取价格

这些新型器件采用电荷补偿原理和专有工艺技术开发,具有最低的导通电阻,以及低栅极电荷和卓越的
IXFP230N075T2 IXYS

获取价格

TrenchT2 HiperFET Power MOSFET
IXFP230N075T2 LITTELFUSE

获取价格

这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能