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IXFP230N075T2 PDF预览

IXFP230N075T2

更新时间: 2024-11-18 11:14:03
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 205K
描述
TrenchT2 HiperFET Power MOSFET

IXFP230N075T2 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:8.55Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):850 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (Abs) (ID):230 A
最大漏极电流 (ID):230 A最大漏源导通电阻:0.0042 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):480 W
最大脉冲漏极电流 (IDM):700 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFP230N075T2 数据手册

 浏览型号IXFP230N075T2的Datasheet PDF文件第2页浏览型号IXFP230N075T2的Datasheet PDF文件第3页浏览型号IXFP230N075T2的Datasheet PDF文件第4页浏览型号IXFP230N075T2的Datasheet PDF文件第5页浏览型号IXFP230N075T2的Datasheet PDF文件第6页 
TrenchT2TM HiperFETTM  
Power MOSFET  
VDSS = 75V  
ID25 = 230A  
RDS(on) 4.2mΩ  
IXFA230N075T2  
IXFP230N075T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXFA)  
Fast Intrinsic Rectifier  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220AB (IXFP)  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
75  
75  
V
V
VDGR  
VGSM  
Transient  
± 20  
V
ID25  
ILRMS  
IDM  
TC = 25°C (Chip Capability)  
Lead Current Limit, RMS  
230  
120  
A
A
A
G
D
D (Tab)  
= Drain  
S
TC = 25°C, Pulse Width Limited by TJM  
700  
115  
850  
480  
G = Gate  
D
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
A
mJ  
W
S = Source  
Tab = Drain  
EAS  
PD  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
Features  
TJM  
Tstg  
z International Standard Packages  
z 175°C Operating Temperature  
z High Current Handling Capability  
z Avalanche Rated  
-55 ... +175  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z Fast Intrinsic Rectifier  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
z
Low RDS(on)  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
75  
V
V
Applications  
2.0  
4.0  
z
Automotive  
- Motor Drives  
- 12V Power Bus  
- ABS Systems  
DC/DC Converters and Off-Line UPS  
Primary- Side Switch  
±200 nA  
IDSS  
25 μA  
z
TJ = 150°C  
250 μA  
z
RDS(on)  
VGS = 10V, ID = 50A, Note 1  
4.2 mΩ  
z
High Current Switching Applications  
DS100074A(03/10)  
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IXFP230N075T2 替代型号

型号 品牌 替代类型 描述 数据表
IXTP230N075T2 IXYS

完全替代

TrenchT2TM Power MOSFET
IXTA230N075T2 IXYS

类似代替

N-Channel Enhancement Mode Avalanche Rated
IXFH230N075T2 IXYS

类似代替

TrenchT2 HiperFET Power MOSFET

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