Datasheet > IXFP3N120

IXFP3N120

更新时间： 2024-09-13 04:22:47

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IXYS		/
页数	文件大小	规格书
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描述
HiPerFET Power MOSFETs

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中文翻译

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数据手册
替代型号

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IXFP3N120 数据手册

HiPerFET^TM

IXFA3N120

IXFP 3N120

V_DSS

I_D25

=1200 V

3 A

Power MOSFETs

R_DS(on)= 4.5 Ω

t_rr≤ 300 ns

N-ChannelEnhancementMode

Avalanche Rated, Low Q_g, High dv/dt

Preliminary Data Sheet

Symbol

TestConditions

Maximum Ratings

TO-220(IXFP)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

1200

D (TAB)

V_GS

V_GSM

Continuous

Transient

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

TO-263(IXFA)

E_AR

E_AS

T_C= 25°C

700

D (TAB)

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 4.7 Ω

V/ns

G = Gate

= Drain

P_D

T_C= 25°C

200

S = Source

TAB = Drain

T_J

T_JM

T_stg

-55 to +150

150

-55 to +150

°C

Features

T_L

1.6 mm (0.063 in) from case for 10 s

Mounting torque (TO-220)

300

°C

M_d

1.13/10 Nm/lb.in.

Low gate charge and capacitances

- easier to drive

Weight

TO-220

TO-263

- faster switching

International standard packages

Low R_{DS (on)}

Rated for unclamped Inductive load

Switching (UIS)

Symbol

TestConditions

Characteristic Values

Molding epoxies meet UL 94 V-0

flammability classification

(T_J= 25°C, unless otherwise specified)

min.

typ.

max.

V_DSS

V_GS(th)

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 1.5 mA

1200

2.5

Advantages

5.0

I_GSS

I_DSS

V_GS= 20 V_DC, V_DS= 0

100

Easy to mount

Space savings

V_DS= V

= 25°C

µA

V_GS= 0^DV^SS

T_J^J= 125°C

High power density

R_DS(on)

= 10 V, I_D= 0.5 I_D25

4.5

Ω

P^Gu^Slse test, t ≤ 300 µs, duty cycle d ≤ 2 %

DS99036B(07/04)

12 3 4

中文翻译

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IXFP3N120 替代型号

型号	品牌	替代类型	描述	数据表
IXTP3N120	IXYS	类似代替	High Voltage Power MOSFETs
IXFA3N120	IXYS	功能相似	HiPerFET Power MOSFETs
IXTH3N120	IXYS	功能相似	High Voltage Power MOSFETs

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