Datasheet > IXFP3N120

IXFP3N120

更新时间： 2024-11-18 04:22:47

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	566K
描述
HiPerFET Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IXFP3N120 数据手册

HiPerFET^TM

IXFA3N120

IXFP 3N120

V_DSS

I_D25

=1200 V

3 A

Power MOSFETs

R_DS(on)= 4.5 Ω

t_rr≤ 300 ns

N-ChannelEnhancementMode

Avalanche Rated, Low Q_g, High dv/dt

Preliminary Data Sheet

Symbol

TestConditions

Maximum Ratings

TO-220(IXFP)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

1200

D (TAB)

V_GS

V_GSM

Continuous

Transient

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

TO-263(IXFA)

E_AR

E_AS

T_C= 25°C

700

D (TAB)

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 4.7 Ω

V/ns

G = Gate

= Drain

P_D

T_C= 25°C

200

S = Source

TAB = Drain

T_J

T_JM

T_stg

-55 to +150

150

-55 to +150

°C

Features

T_L

1.6 mm (0.063 in) from case for 10 s

Mounting torque (TO-220)

300

°C

M_d

1.13/10 Nm/lb.in.

Low gate charge and capacitances

- easier to drive

Weight

TO-220

TO-263

- faster switching

International standard packages

Low R_{DS (on)}

Rated for unclamped Inductive load

Switching (UIS)

Symbol

TestConditions

Characteristic Values

Molding epoxies meet UL 94 V-0

flammability classification

(T_J= 25°C, unless otherwise specified)

min.

typ.

max.

V_DSS

V_GS(th)

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 1.5 mA

1200

2.5

Advantages

5.0

I_GSS

I_DSS

V_GS= 20 V_DC, V_DS= 0

100

Easy to mount

Space savings

V_DS= V

= 25°C

µA

V_GS= 0^DV^SS

T_J^J= 125°C

High power density

R_DS(on)

= 10 V, I_D= 0.5 I_D25

4.5

Ω

P^Gu^Slse test, t ≤ 300 µs, duty cycle d ≤ 2 %

DS99036B(07/04)

12 3 4

中文翻译

下载PDF

IXFP3N120 替代型号

型号	品牌	替代类型	描述	数据表
IXTP3N120	IXYS	类似代替	High Voltage Power MOSFETs
IXFA3N120	IXYS	功能相似	HiPerFET Power MOSFETs
IXTH3N120	IXYS	功能相似	High Voltage Power MOSFETs

与IXFP3N120相关器件

型号	品牌	获取价格	描述	数据表
IXFP3N50PM	IXYS	获取价格	PolarHV HiPerFET Power MOSFET
IXFP3N80	IXYS	获取价格	HiPerFET Power MOSFETs
IXFP44N25X3	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXFP44N25X3M	LITTELFUSE	获取价格	超级结MOSFET采用电荷补偿原理和专有工艺技术开发，可提供出类拔萃的质量因数（导通电阻乘
IXFP4N100P	IXYS	获取价格	Polar HiPerFET Power MOSFET
IXFP4N100P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFP4N100PM	IXYS	获取价格	Polar HiperFET Power MOSFET
IXFP4N100PM	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFP4N100Q	IXYS	获取价格	HiPerFET Power MOSFETs Q-Class
IXFP4N100Q	LITTELFUSE	获取价格	功能与特色: 应用: 优点: