Datasheet > IXFP4N100QM

IXFP4N100QM

更新时间： 2024-11-21 14:56:55

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	138K
描述
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中文翻译

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数据手册

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IXFP4N100QM 数据手册

Advance Technical Information

HiPerFET^TM

Power MOSFET

Q-Class

V_DSS= 1000V

I_D25= 2.2A

R_DS(on)≤ 3.0Ω

IXFP4N100QM

N-Channel Enhancement Mode

Avalanche Rated, Low Q_g, High dv/dt

Fast Intrinsic Diode

OVERMOLDED

(IXFP...M) OUTLINE

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1000

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

2.2

I_A

T_C= 25°C

G = Gate

S = Source

D = Drain

E_AS

700

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

Features

^ꢀPlastic Overmolded Tab for Electrical

Isolation

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

^ꢀInternational Standard Package

^ꢀAvalanche Rated

M_d

Mounting Torque

1.13 / 10

Nm/lb.in.

^ꢀFast Intrinsic Diode

^ꢀMolding Epoxies meet UL94V-0

Flammability Classification

Weight

2.5

Advantages

^ꢀHigh Power Density

^ꢀEasy to Mount

^ꢀSpace Savings

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1000

3.0

Typ.

Max.

BV_DSS

V_GS(th)

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 1.5mA

5.0

I_GSS

I_DSS

V_GS= ±20V, V_DS= 0V

±100 nA

V_DS= V_DSS, V_GS= 0V

25 μA

T_J= 125°C

1 mA

R_DS(on)

V_GS= 10V, I_D= 2A, Note 1

3.0

DS100165(06/09)

12 3 4 5

中文翻译

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