5秒后页面跳转
IXFP44N25X3 PDF预览

IXFP44N25X3

更新时间: 2024-11-18 19:43:55
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 280K
描述
Power Field-Effect Transistor,

IXFP44N25X3 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.72
Base Number Matches:1

IXFP44N25X3 数据手册

 浏览型号IXFP44N25X3的Datasheet PDF文件第2页浏览型号IXFP44N25X3的Datasheet PDF文件第3页浏览型号IXFP44N25X3的Datasheet PDF文件第4页浏览型号IXFP44N25X3的Datasheet PDF文件第5页浏览型号IXFP44N25X3的Datasheet PDF文件第6页 
Preliminary Technical Information  
X3-Class HiPERFETTM  
Power MOSFET  
IXFA44N25X3  
IXFP44N25X3  
VDSS = 250V  
ID25 = 44A  
RDS(on) 40m  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXFA)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220 (IXFP)  
TJ = 25C to 150C  
250  
250  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
D (Tab)  
ID25  
IDM  
TC = 25C  
44  
66  
A
A
TC = 25C, Pulse Width Limited by TJM  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
IA  
TC = 25C  
TC = 25C  
22  
A
EAS  
400  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
240  
Features  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
International Standard Packages  
Low RDS(ON) and QG  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Avalanche Rated  
Low Package Inductance  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Advantages  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
250  
V
V
2.5  
4.5  
100 nA  
IDSS  
15 A  
TJ = 125C  
500 A  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
31  
40 m  
DS100875B(6/18)  
© 2017 IXYS CORPORATION, All Rights Reserved  

与IXFP44N25X3相关器件

型号 品牌 获取价格 描述 数据表
IXFP44N25X3M LITTELFUSE

获取价格

超级结MOSFET采用电荷补偿原理和专有工艺技术开发,可提供出类拔萃的质量因数(导通电阻乘
IXFP4N100P IXYS

获取价格

Polar HiPerFET Power MOSFET
IXFP4N100P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFP4N100PM IXYS

获取价格

Polar HiperFET Power MOSFET
IXFP4N100PM LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFP4N100Q IXYS

获取价格

HiPerFET Power MOSFETs Q-Class
IXFP4N100Q LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFP4N100QM IXYS

获取价格

HiPerFET Power MOSFET Q-Class
IXFP4N100QM LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFP4N60P3 LITTELFUSE

获取价格

Power Field-Effect Transistor,