Datasheet > IXFP38N30X3

IXFP38N30X3

更新时间： 2024-11-20 19:22:07

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	228K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXFP38N30X3 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	4.24	Base Number Matches：	1

IXFP38N30X3 数据手册

Advance Technical Information

X3-Class HiPERFET^TM

Power MOSFET

IXFA38N30X3

IXFP38N30X3

V_DSS= 300V

I_D25= 38A

R_DS(on) 50m

N-Channel Enhancement Mode

Avalanche Rated

TO-263 (IXFA)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-220 (IXFP)

T_J= 25C to 150C

300

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

20

30

D (Tab)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

G = Gate

= Drain

S = Source

Tab = Drain

I_A

T_C= 25C

E_AS

400

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

240

T_J

-55 ... +150

150

C

Features

T_JM

T_stg

-55 ... +150



International Standard Packages

Low R_DS(ON)and Q_G



T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Avalanche Rated

Low Package Inductance

F_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-220)

10..65 / 2.2..14.6

1.13 / 10

N/lb

Nm/lb.in

Advantages

Weight

TO-263

TO-220

2.5

3.0



High Power Density

Easy to Mount



Space Savings

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 1mA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

300



Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

2.5

4.5



100 nA



I_DSS

25 A

500 A



T_J= 125C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

50 m

DS100873A(12/17)

12 3 4 5

中文翻译

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