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IXFT75N10Q PDF预览

IXFT75N10Q

更新时间: 2024-11-19 22:51:43
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 155K
描述
HIPER FET POWER MOSFETS Q CLASS

IXFT75N10Q 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-268AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):75 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.02 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-268AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):300 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFT75N10Q 数据手册

 浏览型号IXFT75N10Q的Datasheet PDF文件第2页 
Advanced Technical Information  
HiPerFETTM  
Power MOSFETs  
Q-Class  
IXFH 75N10Q  
IXFT 75N10Q  
VDSS  
ID25  
= 100 V  
= 75 A  
RDS(on) = 20 mW  
trr £ 200ns  
N-ChannelEnhancementMode  
AvalancheRated, Highdv/dt  
Low Gate Charge and Capacitances  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD(IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
100  
100  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
ID25  
IDM  
IAR  
TC = 25°C  
75  
300  
75  
A
A
A
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
TO-268 (IXFT) Case Style  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
1.5  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
5
V/ns  
G
(TAB)  
S
PD  
TC = 25°C  
300  
W
G = Gate  
D = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
S = Source  
TAB = Drain  
Features  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
l IXYS advanced low gate charge  
process  
l International standard packages  
l Low gate charge and capacitance  
- easier to drive  
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-247AD  
TO-268  
6
4
g
g
- faster switching  
l Low RDS (on)  
Symbol  
TestConditions  
Characteristic Values  
l Unclamped Inductive Switching (UIS)  
rated  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = ±20 VDC, VDS = 0  
100  
V
V
l Molding epoxies meet UL 94 V-0  
flammability classification  
2.0  
4
±100  
nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25  
1
µA  
mA  
l
Easy to mount  
Space savings  
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
20 m Ω  
l
High power density  
© 1999 IXYS All rights reserved  
98550A (6/99)  

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