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IXFT80N10Q PDF预览

IXFT80N10Q

更新时间: 2024-11-05 12:20:15
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 55K
描述
HiPerFET Power MOSFETs Q-Class

IXFT80N10Q 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-268
包装说明:TO-268, 3 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.83其他特性:AVALANCHE RATED
雪崩能效等级(Eas):1500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):80 A最大漏源导通电阻:0.015 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-268
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):320 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

IXFT80N10Q 数据手册

 浏览型号IXFT80N10Q的Datasheet PDF文件第2页 
HiPerFETTM  
Power MOSFETs  
Q-Class  
IXFH 80N10Q VDSS  
= 100 V  
= 80 A  
IXFT 80N10Q  
ID25  
RDS(on) = 15 mW  
trr £ 200ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dV/dt  
Low Gate Charge and Capacitances  
Preliminary data  
TO-247 AD (IXFH)  
Symbol  
TestConditions  
MaximumRatings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
100  
100  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
ID25  
IDM  
IAR  
TC = 25°C  
80  
320  
80  
A
A
A
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
TO-268 (IXFT) Case Style  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
1.5  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
5
V/ns  
G
S
(TAB)  
PD  
TC = 25°C  
360  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
Md  
Mountingtorque  
(TO-247)  
1.13/10 Nm/lb.in.  
• IXYS advanced low gate charge  
process  
• Internationalstandardpackages  
• Low gate charge and capacitance  
- easier to drive  
Weight  
TO-247AD  
TO-268  
6
4
g
g
- faster switching  
• Low RDS (on)  
• Unclamped Inductive Switching (UIS)  
rated  
• Molding epoxies meet UL94V-0  
flammabilityclassification  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 mA  
VDS = VGS, ID = 4 mA  
VGS = ±20 VDC, VDS = 0  
100  
2.0  
V
V
4
±100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25  
1
mA  
mA  
Advantages  
• Easy to mount  
• Space savings  
• High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
15 mW  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98592B(7/00)  
1 - 2  

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