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IXFR32N50Q_04 PDF预览

IXFR32N50Q_04

更新时间: 2024-11-18 12:20:15
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页数 文件大小 规格书
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描述
HiPerFET Power MOSFETs ISOPLUS247

IXFR32N50Q_04 数据手册

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HiPerFETTMPowerMOSFETs  
ISOPLUS247TM  
IXFR 32N50Q VDSS  
ID25  
= 500 V  
= 30 A  
RDS(on) = 0.16 Ω  
(Electrically Isolated Back Surface)  
trr  
= 250 ns  
N-ChannelEnhancementMode  
High dV/dt, Low trr, HDMOSTM Family  
ISOPLUS
E 153432  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 150°C  
500  
500  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
G
D
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
Isolated back surface*  
D = Drain  
ID25  
IDM  
IAR  
T
= 25°C  
30  
120  
30  
A
A
A
TC = 25°C, Pulse width limited by TJM  
TCC = 25°C  
G = Gate  
S = Source  
EAS  
EAR  
T
= 25°C  
1.5  
45  
J
mJ  
TCC = 25°C  
* Patent pending  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
5
V/ns  
Features  
PD  
TC = 25°C  
310  
W
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
-55 ... +150  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
2500  
6
°C  
V~  
g
z
Low drain to tab capacitance(<50pF)  
VISOL  
Weight  
50/60 Hz, RMS  
t = 1 minute leads-to-tab  
z
Low RDS (on) HDMOSTM process  
z
Rugged polysilicon gate cell structure  
z
Unclamped Inductive Switching (UIS)  
rated  
z
Fast intrinsic Rectifier  
Applications  
Symbol  
TestConditions  
Characteristic Values  
z
DC-DC converters  
Battery chargers  
(TJ = 25°C, unless otherwise specified)  
z
min. typ. max.  
z
Switched-mode and resonant-mode  
VDSS  
VGS = 0 V, ID = 1mA  
500  
2.5  
V
V
power supplies  
z
DC choppers  
VGS(th)  
IGSS  
VDS = VGS, ID = 4mA  
VGS = 20 VDC, VDS = 0  
4.5  
z
AC motor control  
100 nA  
Advantages  
IDSS  
VDS = V  
T = 25°C  
TJJ = 125°C  
100  
1
µA  
VGS = 0DVSS  
mA  
z
Easy assembly  
Space savings  
z
RDS(on)  
VGS = 10 V, ID = IT  
Notes 1, 2  
0.16  
z
High power density  
DS98608D(01/04)  
© 2004 IXYS All rights reserved  

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Electrically Isolated Back Surface