Datasheet > IXFR32N50Q_04

IXFR32N50Q_04

更新时间： 2024-01-10 09:32:18

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	558K
描述
HiPerFET Power MOSFETs ISOPLUS247

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中文翻译

获取价格

数据手册

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IXFR32N50Q_04 数据手册

HiPerFET^TMPowerMOSFETs

ISOPLUS247^TM

IXFR 32N50Q V_DSS

I_D25

= 500 V

= 30 A

R_DS(on)= 0.16 Ω

(Electrically Isolated Back Surface)

t_rr

= 250 ns

N-ChannelEnhancementMode

High dV/dt, Low t_rr, HDMOS^TMFamily

ISOPLUS247^TM

E 153432

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

= 25°C to 150°C

500

T^J_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

V_GSM

Continuous

Transient

Isolated back surface*

D = Drain

I_D25

I_DM

I_AR

= 25°C

120

T^C= 25°C, Pulse width limited by T_JM

T^C_C= 25°C

G = Gate

S = Source

E_AS

E_AR

= 25°C

1.5

T^C_C= 25°C

* Patent pending

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

Features

P_D

T_C= 25°C

310

T_J

T_JM

T_stg

-55 ... +150

150

°C

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

-55 ... +150

T_L

1.6 mm (0.062 in.) from case for 10 s

300

2500

°C

Low drain to tab capacitance(<50pF)

V_ISOL

Weight

50/60 Hz, RMS

t = 1 minute leads-to-tab

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Fast intrinsic Rectifier

Applications

Symbol

TestConditions

Characteristic Values

DC-DC converters

Battery chargers

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Switched-mode and resonant-mode

V_DSS

V_GS= 0 V, I_D= 1mA

500

2.5

power supplies

DC choppers

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 4mA

V_GS= 20 V_DC, V_DS= 0

4.5

AC motor control

100 nA

Advantages

I_DSS

V_DS= V

T = 25°C

T_J^J= 125°C

100

µA

V_GS= 0^DV^SS

Easy assembly

Space savings

R_DS(on)

V_GS= 10 V, I_D= I_T

Notes 1, 2

0.16

Ω

High power density

DS98608D(01/04)

12 3 4

中文翻译

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