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IXFR36N50P PDF预览

IXFR36N50P

更新时间: 2024-09-29 14:56:11
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 315K
描述
功能与特色: 优点: 应用:

IXFR36N50P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
风险等级:5.71Is Samacsys:N
其他特性:AVALANCHE RATED, UL RECOGNIZED雪崩能效等级(Eas):1500 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):19 A
最大漏源导通电阻:0.19 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):100 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFR36N50P 数据手册

 浏览型号IXFR36N50P的Datasheet PDF文件第2页浏览型号IXFR36N50P的Datasheet PDF文件第3页浏览型号IXFR36N50P的Datasheet PDF文件第4页浏览型号IXFR36N50P的Datasheet PDF文件第5页浏览型号IXFR36N50P的Datasheet PDF文件第6页 
PolarHVTM HiPerFET  
Power MOSFET  
IXFC 36N50P  
IXFR 36N50P  
VDSS = 500  
ID25 19  
V
A
=
RDS(on) 190 mΩ  
200 ns  
(Electrically Isolated Back Surface)  
trr  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS220TM (IXFC)  
E153432  
VDSS  
VDGR  
TJ = 25° C to 150° C  
500  
500  
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
S
Isolated back surface  
ID25  
IDM  
TC = 25° C  
19  
A
A
TC = 25° C, pulse width limited by TJM  
100  
ISOPLUS247TM (IXFR)  
E153432  
IAR  
TC =25° C  
TC =25° C  
TC =25° C  
36  
50  
A
mJ  
J
EAR  
EAS  
1.5  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
,
20  
V/ns  
G
D
Isolated back surface  
TC =25° C  
156  
W
S
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
D = Drain  
S = Source  
TL  
1.6 mm (0.062 in.) from case for 10 s  
50/60 Hz, RMS, 1 minute  
300  
°C  
Features  
l
International standard isolated  
packages  
UL recognized packages  
VISOL  
2500  
V~  
l
FC  
Mounting Force  
(IXFC)  
(IXFR)  
11..65 / 2.5..15  
20..120 / 4.5..25  
N/lb  
N/lb  
l
Silicon chip on Direct-Copper-Bond  
Weight  
(IXFC)  
(IXFR)  
3
5
g
g
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic diode  
Symbol  
Test Conditions  
Characteristic Values  
l
l
l
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
500  
V
V
VDS = VGS, ID = 4 mA  
2.5  
5.0  
VGS  
=
30 VDC, VDS = 0  
100  
nA  
Advantages  
Easy to mount  
Space savings  
High power density  
l
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
l
TJ = 125° C  
l
RDS(on)  
VGS = 10 V, ID = IT  
190 mΩ  
DS99312E(10/05)  
© 2006 IXYS All rights reserved  

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