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IXFR44N60 PDF预览

IXFR44N60

更新时间: 2024-11-17 22:11:55
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页数 文件大小 规格书
2页 37K
描述
HiPerFETTM Power MOSFETs ISOPLUS247

IXFR44N60 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
风险等级:5.72其他特性:AVALANCHE RATED
雪崩能效等级(Eas):3000 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):38 A最大漏极电流 (ID):38 A
最大漏源导通电阻:0.13 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):400 W
最大脉冲漏极电流 (IDM):60 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFR44N60 数据手册

 浏览型号IXFR44N60的Datasheet PDF文件第2页 
HiPerFETTM Power MOSFETs  
ISOPLUS247TM  
IXFR 44N60  
VDSS = 600 V  
ID25 = 38 A  
(Electrically Isolated Back Surface)  
RDS(on) = 130 mW  
Single MOSFET Die  
trr £ 250 ns  
ISOPLUS 247TM  
E153432  
Symbol  
TestConditions  
MaximumRatings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
600  
600  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, Note 1  
TC = 25°C  
38  
60  
44  
A
A
A
G = Gate  
S = Source  
D = Drain  
*Patentpending  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
3
mJ  
J
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
5
V/ns  
Features  
PD  
TC = 25°C  
400  
W
• SiliconchiponDirect-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electricalisolation  
• Low drain to tab capacitance(<30pF)  
• Low RDS (on) HDMOSTM process  
• Rugged polysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
2500  
5
°C  
V~  
g
VISOL  
Weight  
50/60 Hz, RMS  
t = 1 min  
• Fast intrinsic Rectifier  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• DC-DC converters  
• Battery chargers  
• Switched-modeandresonant-mode  
powersupplies  
• DC choppers  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V. ID = 250mA  
VDS = VGS. ID = 4mA  
VGS = ±20 V, VDS = 0  
600  
2.5  
V
4.5 V  
• AC & DC motor control  
±100nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100 mA  
2 mA  
• Easy assembly  
• Space savings  
RDS(on)  
VGS = 10 V, ID = IT  
Notes 2, 3  
130 mW  
• High power density  
• Low noise to ground  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98728(06/09/00)  
1 - 2  

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