Datasheet > IXFR64N50P

IXFR64N50P

更新时间： 2024-03-04 09:49:46

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	149K
描述
功能与特色: 优点: 应用:

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXFR64N50P 数据手册

Polar^TMPower MOSFET

HiPerFET^TM

V_DSS= 500V

I_D25= 37A

R_DS(on)≤ 95mΩ

IXFR64N50P

t_rr

≤ 200ns

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode

Avalanche Rated

ISOPLUS247

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

500

V_DGR

V_GSS

V_GSM

Continuous

Transient

±30

±40

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

Isolated Tab

150

I_A

T_C= 25°C

E_AS

2.5

G = Gate

D = Drain

S = Source

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

300

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

ꢀ

International Standard Package

Fast Intrinsic Rectifier

Avalanche Rated

Low R_DS(ON)and Q_G

Low Package Inductance

ꢀ

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

V_ISOL

50/60 Hz, RMS

t = 1min

t = 1s

2500

3000

I_ISOL≤ 1mA

M_d

Mounting Force

20..120 / 4.5..27

N/lb.

Advantages

Weight

ꢀ

High Power Density

Easy to Mount

Space Savings

ꢀ

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

Applications

(T_J= 25°C, Unless Otherwise Specified)

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 8mA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

500

3.0

ꢀ

Switched-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

5.5

ꢀ

±200 nA

ꢀ

I_DSS

25 μA

1 mA

ꢀ

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 32A, Note 1

95 mΩ

DS99412F(5/09)

12 3 4 5

中文翻译

下载PDF

与IXFR64N50P相关器件

型号	品牌	获取价格	描述	数据表
IXFR64N50Q3	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXFR64N50Q3	IXYS	获取价格	Power Field-Effect Transistor, 45A I(D), 500V, 0.094ohm, 1-Element, N-Channel, Silicon, Me
IXFR64N60P	IXYS	获取价格	PolarHV HiPerFET Power MOSFET
IXFR64N60P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFR64N60Q3	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXFR64N60Q3	IXYS	获取价格	Power Field-Effect Transistor, 42A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Me
IXFR66N50Q2	IXYS	获取价格	HiPerFET Power MOSFET Q2-Class
IXFR70N15	IXYS	获取价格	HiPerFET Power MOSFETs
IXFR80N15Q	IXYS	获取价格	HiPerFET Power MOSFETs ISOPLUS247
IXFR80N20Q	IXYS	获取价格	HiPerFET Power MOSFETs ISOPLUS247, Q-Class