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IXFR64N50P PDF预览

IXFR64N50P

更新时间: 2024-11-21 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 149K
描述
功能与特色: 优点: 应用:

IXFR64N50P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.71其他特性:AVALANCHE RATED, UL RECOGNIZED
雪崩能效等级(Eas):2500 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):37 A最大漏极电流 (ID):37 A
最大漏源导通电阻:0.095 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):150 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFR64N50P 数据手册

 浏览型号IXFR64N50P的Datasheet PDF文件第2页浏览型号IXFR64N50P的Datasheet PDF文件第3页浏览型号IXFR64N50P的Datasheet PDF文件第4页浏览型号IXFR64N50P的Datasheet PDF文件第5页 
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 500V  
ID25 = 37A  
RDS(on) 95mΩ  
IXFR64N50P  
trr  
200ns  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
ISOPLUS247  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
37  
A
A
Isolated Tab  
150  
IA  
TC = 25°C  
TC = 25°C  
64  
A
J
EAS  
2.5  
G = Gate  
D = Drain  
S = Source  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
20  
V/ns  
W
300  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
International Standard Package  
Fast Intrinsic Rectifier  
Avalanche Rated  
Low RDS(ON) and QG  
Low Package Inductance  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
VISOL  
50/60 Hz, RMS  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
IISOL 1mA  
Md  
Mounting Force  
20..120 / 4.5..27  
5
N/lb.  
g
Advantages  
Weight  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 8mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
500  
3.0  
V
V
Switched-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
Laser Drivers  
AC and DC Motor Drives  
Robotics and Servo Controls  
5.5  
±200 nA  
IDSS  
25 μA  
1 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 32A, Note 1  
95 mΩ  
DS99412F(5/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

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