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IXFR64N60P PDF预览

IXFR64N60P

更新时间: 2024-11-18 11:14:07
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 151K
描述
PolarHV HiPerFET Power MOSFET

IXFR64N60P 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknown风险等级:5.68
Is Samacsys:N其他特性:AVALANCHE RATED, UL RECOGNIZED
雪崩能效等级(Eas):3500 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):36 A最大漏源导通电阻:0.105 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):150 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFR64N60P 数据手册

 浏览型号IXFR64N60P的Datasheet PDF文件第2页浏览型号IXFR64N60P的Datasheet PDF文件第3页浏览型号IXFR64N60P的Datasheet PDF文件第4页浏览型号IXFR64N60P的Datasheet PDF文件第5页 
VDSS  
ID25  
= 600  
36  
V
A
PolarHVTM HiPerFET  
Power MOSFET  
IXFR 64N60P  
=
RDS(on) 105 mΩ  
200 ns  
trr  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
ISOPLUS247 (IXFR)  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 150° C  
600  
600  
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
Isolated back surface  
ID25  
IDM  
TC = 25° C  
36  
A
A
G = Gate  
S = Source  
D = Drain  
TC = 25° C, pulse width limited by TJM  
150  
IAR  
TC =25° C  
64  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
80  
mJ  
J
3.5  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 2 Ω  
,
20  
V/ns  
Features  
Silicon chip on Direct-Copper-Bond  
substrate  
l
TC = 25° C  
360  
W
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
l
l
VISOL  
TL  
FC  
50/60 Hz, RMS, 1 minute  
2500  
300  
22..130/5..29  
V~  
°C  
N/lb  
1.6 mm (0.062 in.) from case for 10 s  
Mounting force  
l
Low package inductance  
- easy to drive and to protect  
Weight  
ISOPLUS247  
5
g
Advantages  
l
Symbol  
Test Conditions  
Characteristic Values  
Easy to mount  
Space savings  
High power density  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
l
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 8 mA  
600  
V
V
3.0  
5.0  
200  
25  
VGS  
=
30 VDC, VDS = 0  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
µA  
µA  
TJ = 125° C  
1000  
RDS(on)  
VGS = 10 V, ID = IT , Note 1  
105 mΩ  
DS99441E(01/06)  
© 2006 IXYS All rights reserved  

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