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IXFR80N50P PDF预览

IXFR80N50P

更新时间: 2024-11-05 11:14:07
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页数 文件大小 规格书
5页 149K
描述
PolarHV HiPerFET Power MOSFET ISOPLUS247

IXFR80N50P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:ISOPLUS247, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:8.29
其他特性:AVALANCHE RATED, UL RECOGNIZED雪崩能效等级(Eas):3500 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):45 A
最大漏极电流 (ID):45 A最大漏源导通电阻:0.072 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):360 W最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFR80N50P 数据手册

 浏览型号IXFR80N50P的Datasheet PDF文件第2页浏览型号IXFR80N50P的Datasheet PDF文件第3页浏览型号IXFR80N50P的Datasheet PDF文件第4页浏览型号IXFR80N50P的Datasheet PDF文件第5页 
PolarHVTM HiPerFET  
Power MOSFET  
ISOPLUS247TM  
IXFR 80N50P  
VDSS = 500 V  
ID25 = 45 A  
RDS(on) 72 mΩ  
trr  
200 ns  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 150° C  
TJ = 25° C to 150° C; RGS = 1 MΩ  
500  
500  
V
V
ISOPLUS247 (IXFR)  
E153432  
VGSM  
VGSM  
Transient  
Continuous  
40  
30  
V
V
ID25  
IDM  
TC =25° C  
45  
200  
A
A
TC = 25° C, pulse width limited by TJM  
G
D
ab)  
S
IAR  
EAR  
EAS  
TC =25° C  
TC =25° C  
TC =25° C  
80  
80  
3.5  
A
mJ  
J
G = Gate  
D = Drain  
S = Source  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 2 Ω  
,
20  
V/ns  
Features  
l
Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
TC = 25° C  
360  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
l
l
l
l
Low drain to tab capacitance(<30pF)  
Low RDS (on) HDMOSTM process  
TL  
Maximum lead temperature for soldering  
300  
°C  
FC  
Mounting force  
20..120/4.5..25  
N/lb  
V~  
g
Rugged polysilicon gate cell structure  
Rated for Unclamped Inductive Load  
Switching (UIS)  
VISOL  
Weight  
50/60 Hz, RMS, 1 minute  
2500  
5
l
Fast intrinsic Rectifier  
Applications  
l
DC-DC converters  
l
Battery chargers  
l
Symbol  
Test Conditions  
Characteristic Values  
Switched-mode and resonant-mode  
power supplies  
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
l
DC choppers  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 500 µA  
500  
V
V
l
AC motor control  
VDS = VGS, ID = 8 mA  
3.0  
5.0  
Advantages  
l
VGS  
=
30 VDC, VDS = 0  
200  
nA  
Easy assembly  
l
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
2
µA  
mA  
Space savings  
TJ = 125° C  
l
High power density  
RDS(on)  
VGS = 10 V, ID = 40 A  
72 mΩ  
DS99438E(03/06)  
© 2006 IXYS All rights reserved  

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