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IXFR80N20Q PDF预览

IXFR80N20Q

更新时间: 2024-11-05 11:14:07
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IXYS /
页数 文件大小 规格书
2页 39K
描述
HiPerFET Power MOSFETs ISOPLUS247, Q-Class

IXFR80N20Q 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.83
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1500 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):71 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.028 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):310 W最大脉冲漏极电流 (IDM):320 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFR80N20Q 数据手册

 浏览型号IXFR80N20Q的Datasheet PDF文件第2页 
HiPerFETTM Power MOSFETs  
ISOPLUS247TM, Q-Class  
(Electrically Isolated Back Surface)  
IXFR 80N20Q VDSS = 200 V  
ID25 = 71 A  
RDS(on) = 28mW  
N-Channel Enhancement Mode  
Avalanche Rated  
trr £ 200 ns  
Low Qg, High dv/dt  
Preliminary data  
Symbol  
TestConditions  
MaximumRatings  
ISOPLUS 247TM  
E153432  
VDSS  
VDGR  
TJ = 25°C to 150°C  
200  
200  
V
V
TJ = 25°C to 150°C; RGS = 1 MW  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
G
D
ID25  
IDM  
IAR  
TC = 25°C  
71  
320  
80  
A
A
A
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
G = Gate  
D = Drain  
TAB = Drain  
S = Source  
EAR  
TC = 25°C  
45  
1.5  
5
mJ  
J
EAS  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
V/ns  
Features  
PD  
TC = 25°C  
310  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
• SiliconchiponDirect-Copper-Bond  
substrate  
- High power dissipation  
TJM  
Tstg  
-55 ... +150  
- Isolated mounting surface  
- 2500V electricalisolation  
• Low drain to tab capacitance(<30pF)  
• Low RDS (on) HDMOSTM process  
• Rugged polysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mountingtorque  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
Weight  
5
g
• Fast intrinsic Rectifier  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Applications  
min.  
typ.  
max.  
• DC-DC converters  
• Battery chargers  
• Switched-modeandresonant-mode  
powersupplies  
VDSS  
VGS = 0 V, ID = 250 uA  
VDS = VGS, ID = 4 mA  
200  
V
V
VGS(th)  
2.0  
4.0  
• DC choppers  
• AC motor control  
IGSS  
VGS = ±20 VDC, VDS = 0  
±100  
nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25  
1
mA  
mA  
• Easy assembly  
• Space savings  
• High power density  
RDS(on)  
VGS = 10 V, ID = IT  
Note 1  
28 mW  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98617A(7/00)  
1 - 2  

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