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IXFR64N50Q3 PDF预览

IXFR64N50Q3

更新时间: 2024-11-18 21:22:19
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 142K
描述
Power Field-Effect Transistor, 45A I(D), 500V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN

IXFR64N50Q3 技术参数

生命周期:Transferred包装说明:PLASTIC, ISOPLUS247, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:8.49其他特性:AVALANCHE RATED, UL RECOGNIZED
雪崩能效等级(Eas):4000 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):45 A最大漏极电流 (ID):45 A
最大漏源导通电阻:0.094 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):500 W
最大脉冲漏极电流 (IDM):160 A子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFR64N50Q3 数据手册

 浏览型号IXFR64N50Q3的Datasheet PDF文件第2页浏览型号IXFR64N50Q3的Datasheet PDF文件第3页浏览型号IXFR64N50Q3的Datasheet PDF文件第4页浏览型号IXFR64N50Q3的Datasheet PDF文件第5页 
Advance Technical Information  
HiperFETTM  
Power MOSFET  
Q3-Class  
VDSS = 500V  
ID25 = 45A  
RDS(on) 94mΩ  
IXFR64N50Q3  
trr  
250ns  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
Fast Intrinsic Rectifier  
ISOPLUS247  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G
Isolated Tab  
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
45  
A
A
160  
G = Gate  
S = Source  
D
= Drain  
IA  
TC = 25°C  
TC = 25°C  
64  
4
A
J
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
50  
V/ns  
W
500  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
Low Intrinsic Gate Resistance  
2500V~ Electrical Isolation  
Fast Intrinsic Rectifier  
z
z
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
z
z
z
VISOL  
50/60 Hz, 1 Minute  
Mounting Force  
2500  
V∼  
Avalanche Rated  
Low Package Inductance  
FC  
20..120/4.5..27  
5
N/lb.  
g
Weight  
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
500  
3.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
6.5  
z
z
±200 nA  
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
IDSS  
50 μA  
2 mA  
z
TJ = 125°C  
z
RDS(on)  
VGS = 10V, ID = 32A, Note 1  
94 mΩ  
DS100347(06/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  

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