Datasheet > IXFR44N80P

IXFR44N80P

更新时间： 2023-12-06 20:13:11

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	168K
描述
功能与特色: 优点: 应用:

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中文翻译

获取价格

数据手册

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IXFR44N80P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

IXFR 44N80P

V_DSS= 800

I_D25= 25

R_DS(on)≤ 200 mΩ

t_rr≤ 250 ns

Electrically Isolated Tab

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

ISOPLUS247 (IXFR)

E153432

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

800

V_GS

V_GSM

Continuous

Transient

± 30

± 40

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

100

Isolated Tab

I_AR

E_AR

E_AS

T_C= 25°C

3.4

G = Gate

S = Source

D = Drain

Features

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 10 Ω

V/ns

^zSilicon chip on Direct-Copper-Bond

substrate

T_C= 25°C

300

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

^zLow drain to tab capacitance(<30pF)

^zLow R_{DS (on)}HDMOS^TMprocess

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 seconds

300

260

°C

^zRugged polysilicon gate cell structure

^zUnclamped Inductive Switching (UIS)

rated

V_ISOL

F_C

50/60 Hz, RMS, 1 minute

Mounting force

2500

^zFast intrinsic Rectifier

20..120 /4.5..25

N/lb

Applications

Weight

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Min. Typ.

Max.

power supplies

DC choppers

^zAC motor control

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 800 μA

V_DS= V_GS, I_D= 8 mA

V_GS= ± 30 V, V_DS= 0 V

800

3.0

5.0

Advantages

± ±200

Easy assembly

Space savings

High power density

I_DSS

V_DS= V_DSS

V_GS= 0 V

μA

T_J= 125°C

1.5 mA

R_DS(on)

V_GS= 10 V, I_D= I_T, Note 1

200 mΩ

DS99504E(06/06)

12 3 4 5

中文翻译

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