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IXFR44N80P PDF预览

IXFR44N80P

更新时间: 2024-11-19 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 168K
描述
功能与特色: 优点: 应用:

IXFR44N80P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
风险等级:5.75其他特性:AVALANCHE RATED
雪崩能效等级(Eas):3400 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (ID):25 A最大漏源导通电阻:0.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFR44N80P 数据手册

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PolarHVTM HiPerFET  
Power MOSFET  
IXFR 44N80P  
VDSS = 800  
ID25 = 25  
RDS(on) 200 mΩ  
trr 250 ns  
V
A
Electrically Isolated Tab  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS247 (IXFR)  
E153432  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
800  
800  
V
V
VGS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
25  
100  
A
A
Isolated Tab  
IAR  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
TC = 25°C  
25  
80  
3.4  
A
mJ  
J
G = Gate  
S = Source  
D = Drain  
Features  
dv/dt  
PD  
IS IDM, di/dt 100 A/μs, VDD VDSS  
TJ 150°C, RG = 10 Ω  
,
10  
V/ns  
z Silicon chip on Direct-Copper-Bond  
substrate  
TC = 25°C  
300  
W
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z Low drain to tab capacitance(<30pF)  
z Low RDS (on) HDMOSTM process  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z Rugged polysilicon gate cell structure  
z Unclamped Inductive Switching (UIS)  
rated  
VISOL  
FC  
50/60 Hz, RMS, 1 minute  
Mounting force  
2500  
V~  
z Fast intrinsic Rectifier  
20..120 /4.5..25  
N/lb  
Applications  
Weight  
5
g
z
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
power supplies  
DC choppers  
z AC motor control  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 800 μA  
VDS = VGS, ID = 8 mA  
VGS = ± 30 V, VDS = 0 V  
800  
V
V
3.0  
5.0  
Advantages  
± ±200  
50  
nA  
z
Easy assembly  
Space savings  
High power density  
z
IDSS  
VDS = VDSS  
VGS = 0 V  
μA  
z
TJ = 125°C  
1.5 mA  
RDS(on)  
VGS = 10 V, ID = IT, Note 1  
200 mΩ  
DS99504E(06/06)  
© 2006 IXYS All rights reserved  

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