Datasheet > IXFR4N100Q

IXFR4N100Q

更新时间： 2024-11-22 14:56:43

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
3页	112K
描述
功能与特色: 应用: 优点:

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中文翻译

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技术参数
数据手册

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IXFR4N100Q 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXFR4N100Q 数据手册

HiPerFET^TMPowerMOSFETs

ISOPLUS247^TM

V_DSS=1000 V

I_D25= 3.5 A

IXFR 4N100Q

R_DS(on)= 3.0 Ω

(Electrically Isolated Backside)

t_rr≤ 200ns

N-Channel Enhancement Mode

Avalanche Rated, Low Q_g, High dv/dt

PreliminaryData

ISOPLUS247^TM

Symbol

TestConditions

Maximum Ratings

E153432

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

1000

V_GS

V_GSM

Continuous

Transient

±20

±30

Isolated backside*

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, Note 1

T_C= 25°C

3.5

G = Gate

S = Source

D = Drain

E_AR

E_AS

T_C= 25°C

700

* Patent pending

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

P_D

T_J

T_C= 25°C

Features

^zSilicon chip on Direct-Copper-Bond

-55 ... +150

°C

substrate

T_JM

T_stg

150

-55 ... +150

°C

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

^zLow drain to tab capacitance(<30pF)

^zLow R_{DS (on)}HDMOS^TMprocess

^zRugged polysilicon gate cell structure

^zRated for Unclamped Inductive Load

T_L

1.6 mm (0.063 in.) from case for 10 s

300

2500

°C

V_ISOL

Weight

50/60 Hz, RMS

t = 1 min

Switching (UIS)

^zFast intrinsic Rectifier

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 1mA

1000

3.0

5.0 V

V_DS= V_GS, I_D= 1.5 mA

DC choppers

^zAC motor control

V_GS= ±20 V_DC, V_DS= 0

±100 nA

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

50 µA

1 mA

Advantages

Easy assembly

Space savings

R_DS(on)

V_GS= 10 V, I_D= I_T

Notes 2, 3

3.0 Ω

High power density

DS98860A(12/02)

12 3

中文翻译

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