Datasheet > IXFR58N20Q

IXFR58N20Q

更新时间： 2024-11-06 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
3页	170K
描述
功能与特色: 应用: 优点:

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中文翻译

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数据手册

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IXFR58N20Q 数据手册

HiPerFET^TMPower MOSFETs

ISOPLUS247^TMQ-Class

IXFR 58N20Q V_DSS= 200 V

I_D25

50 A

R_DS(on)

40 mΩ

(Electrically Isolated Back Surface)

t_rr≤ 200 ns

N-ChannelEnhancementMode

AvalancheRated,HighdV/dt

Low Gate Charge and Capacitances

Preliminary Data Sheet

Symbol

TestConditions

Maximum Ratings

ISOPLUS247

E153432

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

200

V_GS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, Note 1

T_C= 25°C

232

Isolated back surface*

D = Drain

G = Gate

S = Source

E_AR

E_AS

T_C= 25°C

1.0

* Patent pending

Features

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

P_D

T_C= 25°C

300

^zSilicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

1.6 mm (0.062 in.) from case for 10 s

250

2500

°C

^zLow drain to tab capacitance(<50pF)

^zIXYS advanced low Q_gprocess

^zRugged polysilicon gate cell structure

^zUnclamped Inductive Switching (UIS)

rated

V_ISOL

Weight

50/60 Hz, RMS

t = 1 min

^zFast intrinsic diode

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

V_DSS

V_GS= 0 V, I_D= 250 µA

200

2.0

power supplies

DC choppers

^zAC motor control

V_GS(th)

V_DS= V_GS, I_D= 4mA

4.0 V

I_GSS

V_GS= ±20 V, V_DS= 0

±100 nA

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

25 µA

1 mA

Easy assembly

Space savings

High power density

R_DS(on)

V_GS= 10 V, I_D= 29A

Note 2

40 mΩ

DS98591B(01/03)

12 3

中文翻译

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