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IXFR58N20Q PDF预览

IXFR58N20Q

更新时间: 2024-11-19 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
3页 170K
描述
功能与特色: 应用: 优点:

IXFR58N20Q 数据手册

 浏览型号IXFR58N20Q的Datasheet PDF文件第2页浏览型号IXFR58N20Q的Datasheet PDF文件第3页 
HiPerFETTM Power MOSFETs  
ISOPLUS247TM Q-Class  
IXFR 58N20Q VDSS = 200 V  
ID25  
=
=
50 A  
RDS(on)  
40 mΩ  
(Electrically Isolated Back Surface)  
trr 200 ns  
N-ChannelEnhancementMode  
AvalancheRated,HighdV/dt  
Low Gate Charge and Capacitances  
Preliminary Data Sheet  
TM  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS247  
E153432  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
200  
200  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, Note 1  
TC = 25°C  
50  
232  
58  
A
A
A
Isolated back surface*  
D = Drain  
G = Gate  
S = Source  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
1.0  
mJ  
J
* Patent pending  
Features  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
5
V/ns  
PD  
TC = 25°C  
300  
W
z Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
1.6 mm (0.062 in.) from case for 10 s  
250  
2500  
5
°C  
V~  
g
z Low drain to tab capacitance(<50pF)  
z IXYS advanced low Qg process  
z Rugged polysilicon gate cell structure  
z Unclamped Inductive Switching (UIS)  
rated  
VISOL  
Weight  
50/60 Hz, RMS  
t = 1 min  
z Fast intrinsic diode  
Applications  
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
z
z
VDSS  
VGS = 0 V, ID = 250 µA  
200  
2.0  
V
power supplies  
DC choppers  
z AC motor control  
z
VGS(th)  
VDS = VGS, ID = 4mA  
4.0 V  
IGSS  
VGS = ±20 V, VDS = 0  
±100 nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25 µA  
1 mA  
z
Easy assembly  
Space savings  
High power density  
z
RDS(on)  
VGS = 10 V, ID = 29A  
Note 2  
40 mΩ  
z
© 2003 IXYS All rights reserved  
DS98591B(01/03)  

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