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IXFR48N60P PDF预览

IXFR48N60P

更新时间: 2024-11-05 11:14:07
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页数 文件大小 规格书
4页 144K
描述
PolarHV HiPerFET Power MOSFET ISOPLUS247

IXFR48N60P 技术参数

是否无铅:不含铅生命周期:Transferred
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:3.5Is Samacsys:N
其他特性:AVALANCHE RATED, UL RECOGNIZED雪崩能效等级(Eas):2000 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):32 A
最大漏源导通电阻:0.15 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):110 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFR48N60P 数据手册

 浏览型号IXFR48N60P的Datasheet PDF文件第2页浏览型号IXFR48N60P的Datasheet PDF文件第3页浏览型号IXFR48N60P的Datasheet PDF文件第4页 
PolarHVTM HiPerFET  
Power MOSFET  
ISOPLUS247TM  
IXFR 48N60P  
VDSS  
ID25  
= 600 V  
= 32 A  
RDS(on) 150 mΩ  
200 ns  
trr  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS247 (IXFR)  
E153432  
VDSS  
VDGR  
TJ = 25° C to 150° C  
600  
600  
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
TAB  
ID25  
IDM  
TC =25° C  
32  
A
A
S
TC = 25° C, pulse width limited by TJM  
110  
IAR  
TC =25° C  
32  
A
G = Gate  
S = Source  
D = Drain  
EAR  
EAS  
TC =25° C  
TC =25° C  
70  
mJ  
J
2.0  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
,
20  
V/ns  
Features  
TC =25° C  
300  
W
l
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
°C  
V~  
International standard isolated  
package  
UL recognized package  
l
l
TL  
1.6 mm (0.062 in.) from case for 10 s  
50/60 Hz, RMS, 1 minute  
300  
Silicon chip on Direct-Copper-Bond  
substrate  
VISOL  
2500  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic diode  
FC  
Mounting Force  
20..120 / 4.5..26  
5
N/lb.  
g
Weight  
l
l
l
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 8 mA  
VGS = 30 VDC, VDS = 0  
600  
V
V
l
Easy to mount  
Space savings  
High power density  
l
3.0  
5.0  
l
200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
1000  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = IT  
150 mΩ  
DS99184E(12/05)  
© 2006 IXYS All rights reserved  

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