5秒后页面跳转
IXFR48N60Q3 PDF预览

IXFR48N60Q3

更新时间: 2024-11-05 19:59:07
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 145K
描述
Power Field-Effect Transistor,

IXFR48N60Q3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.21
Base Number Matches:1

IXFR48N60Q3 数据手册

 浏览型号IXFR48N60Q3的Datasheet PDF文件第2页浏览型号IXFR48N60Q3的Datasheet PDF文件第3页浏览型号IXFR48N60Q3的Datasheet PDF文件第4页浏览型号IXFR48N60Q3的Datasheet PDF文件第5页浏览型号IXFR48N60Q3的Datasheet PDF文件第6页 
Advance Technical Information  
HiperFETTM  
Power MOSFET  
Q3-Class  
VDSS = 600V  
ID25 = 32A  
RDS(on) 154mΩ  
IXFR48N60Q3  
trr  
300ns  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
Fast Intrinsic Rectifier  
ISOPLUS247  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G
Isolated Tab  
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
32  
A
A
120  
G = Gate  
S = Source  
D
= Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
48  
2
A
J
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
50  
V/ns  
W
500  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
Low Intrinsic Gate Resistance  
2500V~ Electrical Isolation  
Fast Intrinsic Rectifier  
z
z
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
z
z
z
VISOL  
50/60 Hz, 1 Minute  
Mounting Force  
2500  
V∼  
Avalanche Rated  
FC  
20..120/4.5..27  
5
N/lb.  
g
Low Package Inductance  
Weight  
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
600  
3.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
6.5  
z
z
±200 nA  
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
IDSS  
25 μA  
1 mA  
z
TJ = 125°C  
z
RDS(on)  
VGS = 10V, ID = 24A, Note 1  
154 mΩ  
DS100349(06/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  

与IXFR48N60Q3相关器件

型号 品牌 获取价格 描述 数据表
IXFR4N100Q IXYS

获取价格

HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Backside)
IXFR4N100Q LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFR50N50 IXYS

获取价格

HiPerFET-TM Power MOSFETs ISOPLUS247-TM
IXFR55N50 IXYS

获取价格

HiPerFET-TM Power MOSFETs ISOPLUS247-TM
IXFR55N50F IXYS

获取价格

HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFR58N20Q IXYS

获取价格

HiPerFET Power MOSFETs ISOPLUS247 Q-Class
IXFR58N20Q LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFR64N50P IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFR64N50P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFR64N50Q3 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor,