Datasheet > IXFR48N60Q3

IXFR48N60Q3

更新时间： 2024-09-30 19:59:07

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	145K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXFR48N60Q3 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.21
Base Number Matches：	1

IXFR48N60Q3 数据手册

Advance Technical Information

HiperFET^TM

Power MOSFET

Q3-Class

V_DSS= 600V

I_D25= 32A

R_DS(on)≤ 154mΩ

IXFR48N60Q3

t_rr

≤ 300ns

(Electrically Isolated Tab)

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

ISOPLUS247

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

600

V_DGR

V_GSS

V_GSM

Continuous

Transient

±30

±40

Isolated Tab

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

120

G = Gate

S = Source

= Drain

I_A

E_AS

T_C= 25°C

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

500

Features

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Silicon Chip on Direct-Copper Bond

(DCB) Substrate

Isolated Mounting Surface

Low Intrinsic Gate Resistance

2500V~ Electrical Isolation

Fast Intrinsic Rectifier

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

V_ISOL

50/60 Hz, 1 Minute

Mounting Force

2500

V∼

Avalanche Rated

F_C

20..120/4.5..27

N/lb.

Low Package Inductance

Weight

Advantages

High Power Density

Easy to Mount

Space Savings

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

600

3.5

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 4mA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

6.5

±200 nA

Power Supplies

DC Choppers

Temperature and Lighting Controls

I_DSS

25 μA

1 mA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 24A, Note 1

154 mΩ

DS100349(06/11)

12 3 4 5 6

中文翻译

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