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IXFR40N50Q2 PDF预览

IXFR40N50Q2

更新时间: 2024-11-05 03:14:35
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HiPerFET Power MOSFETs

IXFR40N50Q2 数据手册

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HiPerFETTM  
Power MOSFETs  
IXFR40N50Q2  
VDSS  
ID25  
= 500 V  
=
29 A  
RDS(on) = 0.17 Ω  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg  
Low Rg, High dv/dt, Low trr  
trr 250 ns  
PreliminaryDataSheet  
ISOPLUS247(IXFR)  
E153432  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 150°C  
500  
500  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
(TAB)  
G
ID25  
IDM  
IAR  
T
= 25°C  
29  
160  
40  
A
A
A
TC = 25°C, pulse width limited by TJM  
D
S
TCC = 25°C  
G = Gate  
S = Source  
D = Drain  
TAB = Isolated  
EAR  
EAS  
T
= 25°C  
50  
2.5  
mJ  
J
TCC = 25°C  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
20  
V/ns  
Features  
z
Double metal process for low gate  
resistance  
International standard packages  
Epoxy meet UL 94 V-0, flammability  
classification  
Low RDS (on), low Qg  
Avalanche energy and current rated  
Fast intrinsic rectifier  
PD  
TC = 25°C  
320  
W
z
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
z
z
TL  
1.6 mm (0.063 in) from case for 10 s  
Mounting force  
300  
°C  
FC  
22...130/5...30 N/lb.  
Applications  
Weight  
5
g
z
DC-DC converters  
Switched-mode and resonant-mode  
power supplies, >500kHz switching  
DC choppers  
Pulse generation  
Laser drivers  
z
z
z
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Advantages  
min. typ. max.  
z
VDSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
500  
2.5  
V
V
Easy to mount  
Space savings  
High power density  
z
VGS(th)  
5.0  
z
IGSS  
IDSS  
VGS = 30 VDC, VDS = 0  
200 nA  
VDS = V  
T = 25°C  
25 µA  
VGS = 0DVSS  
TJJ = 125°C  
1
mA  
RDS(on)  
V
= 10 V, ID = I  
0.17  
PGuSlse test, t 30T0 µs, duty cycle d 2 %  
© 2004 IXYS All rights reserved  
DS99075B(05/04)  

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