Datasheet > IXFR40N50Q2

IXFR40N50Q2

更新时间： 2024-11-18 03:14:35

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	563K
描述
HiPerFET Power MOSFETs

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中文翻译

获取价格

数据手册

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IXFR40N50Q2 数据手册

HiPerFET^TM

Power MOSFETs

IXFR40N50Q2

V_DSS

I_D25

= 500 V

29 A

R_DS(on)= 0.17 Ω

N-Channel Enhancement Mode

Avalanche Rated, Low Q_g

Low R_g, High dv/dt, Low t_rr

t_rr≤ 250 ns

PreliminaryDataSheet

ISOPLUS247(IXFR)

E153432

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

= 25°C to 150°C

500

T^J_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

V_GSM

Continuous

Transient

(TAB)

I_D25

I_DM

I_AR

= 25°C

160

T^C= 25°C, pulse width limited by T_JM

T^C_C= 25°C

G = Gate

S = Source

D = Drain

TAB = Isolated

E_AR

E_AS

= 25°C

2.5

T^C_C= 25°C

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

Features

Double metal process for low gate

resistance

International standard packages

Epoxy meet UL 94 V-0, flammability

classification

Low R_{DS (on)}, low Q_g

Avalanche energy and current rated

Fast intrinsic rectifier

P_D

T_C= 25°C

320

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

1.6 mm (0.063 in) from case for 10 s

Mounting force

300

°C

F_C

22...130/5...30 N/lb.

Applications

Weight

DC-DC converters

Switched-mode and resonant-mode

power supplies, >500kHz switching

DC choppers

Pulse generation

Laser drivers

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Advantages

min. typ. max.

V_DSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 4 mA

500

2.5

Easy to mount

Space savings

High power density

V_GS(th)

5.0

I_GSS

I_DSS

V_GS= 30 V_DC, V_DS= 0

200 nA

V_DS= V

T = 25°C

25 µA

V_GS= 0^DV^SS

T_J^J= 125°C

R_DS(on)

= 10 V, I_D= I

0.17

Ω

P^Gu^Slse test, t ≤ 30^T0 µs, duty cycle d ≤ 2 %

DS99075B(05/04)

12 3 4 5

中文翻译

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