Datasheet > IXFR44N50P

IXFR44N50P

更新时间： 2024-11-06 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	220K
描述
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中文翻译

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数据手册

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IXFR44N50P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

ISOPLUS247^TM

IXFR 44N50P

V_DSS= 500

I_D25= 24

R_DS(on)≤ 150 mΩ

t_rr≤ 200 ns

(Electrically Isolated Back Surface)

N-Channel Enhancement

Avalanche Rated

Fast Intrinsic Diode

ISOPLUS247 (IXFR)

E153432

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25° C to 175° C

T_J= 25° C to 175° C; R_GS= 1 MΩ

500

V_GSM

Transient

Continuous

ISOLATED TAB

I_D25

I_DM

T_C=25° C

T_C= 25° C, pulse width limited by T_JM

132

G = Gate

D = Drain

S = Source

I_AR

E_AR

E_AS

T_C=25° C

1.7

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 10 Ω

V/ns

Features

International standard isolated

package

UL recognized package

T_C=25° C

208

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Fast intrinsic diode

T_L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V_ISOL

F_C

50/60 Hz, RMS, 1 minute

Mounting Force

2500

20..120 / 4.5..25

N/lb

Weight

Advantages

Symbol

Test Conditions

Characteristic Values

Easy to mount

Space savings

High power density

(T_J= 25° C, unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 4 mA

V_GS= 30 V_DC, V_DS= 0

500

2.5

5.0

100

I_DSS

V_DS= V_DSS

V_GS= 0 V

500

µA

T_J= 125° C

R_DS(on)

V_GS= 10 V, I_D= 22 A

150 mΩ

DS99319E(03/06)

12 3 4 5 6

中文翻译

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